Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film

Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, Yosuke Watanabe, Yukiharu Uraoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate and CO2 laser was irradiated to per-hydro-polysilazane for transformation into SiO2. Atomic force microscope analysis showed that the appropriate condition of CO2 laser is possible to form flat SiO2 film on poly-Si surface which has ridges. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis revealed that high quality and uniform SiO2 film in the depth direction was obtained by CO2 laser annealing compared with conventional furnace annealing.

Original languageEnglish
Title of host publicationProceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, AM-FPD 2013
Pages163-166
Number of pages4
Publication statusPublished - Nov 22 2013
Event20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 - Kyoto, Japan
Duration: Jul 2 2013Jul 5 2013

Publication series

NameProceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013

Other

Other20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
CountryJapan
CityKyoto
Period7/2/137/5/13

Fingerprint

Polysilicon
Annealing
Glass
Thin films
Lasers
Photoelectron spectroscopy
Secondary ion mass spectrometry
Fourier transform infrared spectroscopy
Furnaces
Microscopes
X rays
Substrates

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hishitani, D., Horita, M., Ishikawa, Y., Ikenoue, H., Watanabe, Y., & Uraoka, Y. (2013). Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film. In Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 (pp. 163-166). [6617805] (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).

Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film. / Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Watanabe, Yosuke; Uraoka, Yukiharu.

Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. 2013. p. 163-166 6617805 (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hishitani, D, Horita, M, Ishikawa, Y, Ikenoue, H, Watanabe, Y & Uraoka, Y 2013, Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film. in Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013., 6617805, Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013, pp. 163-166, 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013, Kyoto, Japan, 7/2/13.
Hishitani D, Horita M, Ishikawa Y, Ikenoue H, Watanabe Y, Uraoka Y. Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film. In Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. 2013. p. 163-166. 6617805. (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).
Hishitani, Daisuke ; Horita, Masahiro ; Ishikawa, Yasuaki ; Ikenoue, Hiroshi ; Watanabe, Yosuke ; Uraoka, Yukiharu. / Forming SiO2 thin film by CO2 laser annealing of spin-on glass on polycrystalline silicon thin film. Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. 2013. pp. 163-166 (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).
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abstract = "Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate and CO2 laser was irradiated to per-hydro-polysilazane for transformation into SiO2. Atomic force microscope analysis showed that the appropriate condition of CO2 laser is possible to form flat SiO2 film on poly-Si surface which has ridges. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis revealed that high quality and uniform SiO2 film in the depth direction was obtained by CO2 laser annealing compared with conventional furnace annealing.",
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AU - Watanabe, Yosuke

AU - Uraoka, Yukiharu

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AB - Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate and CO2 laser was irradiated to per-hydro-polysilazane for transformation into SiO2. Atomic force microscope analysis showed that the appropriate condition of CO2 laser is possible to form flat SiO2 film on poly-Si surface which has ridges. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis revealed that high quality and uniform SiO2 film in the depth direction was obtained by CO2 laser annealing compared with conventional furnace annealing.

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