Fracture toughness evaluated by indentation methods and its relation to surface energy in silicon single crystals

Masaki Tanaka, Kenji Higashida, Hideharu Nakashima, Hidenari Takagi, Masami Fujiwara

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Fracture toughness of silicon crystals has been investigated by indentation methods, and their surface energy has been calculated using molecular dynamics (MD). When a conical indenter was forced into a (001) silicon wafer at room temperature, {110} cracks were mainly introduced from the indent, indicating that fracture occurs most easily along the {110} plane among the crystallographic planes of the <001> zone. To confirm this orientation dependence, surface energies for those planes were computed using molecular dynamics. The surface energy calculated exhibits the minimum value of 1.50 J·m-2 at the {110} plane, and it increases up to 2.26 J·m-2 at the {100} plane. Fracture toughness was derived from these computed surface energies, and it was shown that KIC value for the {110} crack plane was the minimum among those for the planes of the <001> zone. This result is in good agreement with that obtained by indentation fracture (IF) methods, although the absolute KIC values evaluated by the IF method were larger than those obtained by the calculation.

Original languageEnglish
Pages (from-to)681-684
Number of pages4
JournalMaterials Transactions
Volume44
Issue number4
DOIs
Publication statusPublished - Apr 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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