Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Katsumi Nakamura, Fumihito Masuoka, Akito Nishii, Shin Ichi Nishizawa, Akihiko Furukawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.

Original languageEnglish
Article number8852709
Pages (from-to)4842-4849
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume66
Issue number11
DOIs
Publication statusPublished - Nov 2019

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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