Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Katsumi Nakamura; Fumihito Masuoka; Akito Nishii; Shin Ichi Nishizawa; Akihiko Furukawa

doi:10.1109/TED.2019.2941710

Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Katsumi Nakamura, Fumihito Masuoka, Akito Nishii, Shin Ichi Nishizawa, Akihiko Furukawa

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.

Original language	English
Article number	8852709
Pages (from-to)	4842-4849
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	11
DOIs	https://doi.org/10.1109/TED.2019.2941710
Publication status	Published - Nov 2019

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2019.2941710

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abstract = "In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.",

author = "Katsumi Nakamura and Fumihito Masuoka and Akito Nishii and Nishizawa, {Shin Ichi} and Akihiko Furukawa",

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AU - Nakamura, Katsumi

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AU - Nishii, Akito

AU - Nishizawa, Shin Ichi

AU - Furukawa, Akihiko

PY - 2019/11

Y1 - 2019/11

N2 - In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.

AB - In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.

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Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

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