Frenkel pair accumulation induced crystallization of amorphous MgAl2O4

Alain Chartier, Tomokazu Yamamoto, Kazuhiro Yasuda, Constantin Meis, Syo Matsumura

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The epitaxial and homogeneous irradiation induced re-crystallization of amorphous MgAl2O4 was studied by means of continuous Frenkel pair accumulation in the molecular dynamics framework. Present results point out that the re-crystallization induced by Frenkel pair accumulation appears in both cases to be thermally enhanced but non diffusive. It is governed by a local rearrangement of each point defect in the homogeneous case, while spontaneous Frenkel pair recombination process in the crystalline part or at the interface drives the re-crystallization in the epitaxial case.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalJournal of Nuclear Materials
Volume378
Issue number2
DOIs
Publication statusPublished - Aug 31 2008

Fingerprint

Crystallization
crystallization
Point defects
point defects
Molecular dynamics
Irradiation
molecular dynamics
Crystalline materials
irradiation
spinell

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Frenkel pair accumulation induced crystallization of amorphous MgAl2O4. / Chartier, Alain; Yamamoto, Tomokazu; Yasuda, Kazuhiro; Meis, Constantin; Matsumura, Syo.

In: Journal of Nuclear Materials, Vol. 378, No. 2, 31.08.2008, p. 188-192.

Research output: Contribution to journalArticle

Chartier, Alain ; Yamamoto, Tomokazu ; Yasuda, Kazuhiro ; Meis, Constantin ; Matsumura, Syo. / Frenkel pair accumulation induced crystallization of amorphous MgAl2O4. In: Journal of Nuclear Materials. 2008 ; Vol. 378, No. 2. pp. 188-192.
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