TY - GEN
T1 - Functional passive material VO2 for analogue signal processing with high-speed, low power, and robust performance
AU - Yajima, T.
AU - Nishimura, T.
AU - Toriumi, A.
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/1/31
Y1 - 2017/1/31
N2 - Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This challenge is addressed by the use of VO2 metal-insulator transition as a two-terminal hysteretic voltage switch. The fabricated VO2 switch showed more than 109 switching cycles and the arbitrary values of switching threshold and hysteresis. It enabled us to implement functionality such as (1) the canceling of the noise up to 60 % of the signal amplitude for the stable sensor input, (2) all-passive-element charge pumping for energy harvesting, and (3) the two-terminal high-frequency limiter with excellent linearity for wireless communication and power supply.
AB - Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This challenge is addressed by the use of VO2 metal-insulator transition as a two-terminal hysteretic voltage switch. The fabricated VO2 switch showed more than 109 switching cycles and the arbitrary values of switching threshold and hysteresis. It enabled us to implement functionality such as (1) the canceling of the noise up to 60 % of the signal amplitude for the stable sensor input, (2) all-passive-element charge pumping for energy harvesting, and (3) the two-terminal high-frequency limiter with excellent linearity for wireless communication and power supply.
UR - http://www.scopus.com/inward/record.url?scp=85014441771&partnerID=8YFLogxK
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U2 - 10.1109/IEDM.2016.7838540
DO - 10.1109/IEDM.2016.7838540
M3 - Conference contribution
AN - SCOPUS:85014441771
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 34.4.1-34.4.4
BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016
Y2 - 3 December 2016 through 7 December 2016
ER -