Fundamental Study of Saturation Output Power on Quantum Dot Semiconductor Optical Amplifier (SOA) under High Temperature (85 °c)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied the saturation output power of 1.3-μm wavelength quantum dot semiconductor optical amplifier (QD-SOA) under high temperature by using Fabry-Pérot laser diode structure. The saturation output power of 5 dBm has been confirmed under 85°C with a single stripe device (375 μm length).

Original languageEnglish
Title of host publicationMOC 2019 - 24th Microoptics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages180-181
Number of pages2
ISBN (Electronic)9784863487123
DOIs
Publication statusPublished - Nov 2019
Event24th Microoptics Conference, MOC 2019 - Toyama, Japan
Duration: Nov 17 2019Nov 20 2019

Publication series

NameMOC 2019 - 24th Microoptics Conference

Conference

Conference24th Microoptics Conference, MOC 2019
CountryJapan
CityToyama
Period11/17/1911/20/19

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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