Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film

Isao Tsunoda; Taizoh Sadoh; Masanobu[et al] Miyao

doi:10.15017/1515848

Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film

Isao Tsunoda, Taizoh Sadoh, Masanobu[et al] Miyao

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Abstract

Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800℃ for poly-Si_<0.6>Ge_<0.4> films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

Original language	English
Pages (from-to)	151-154
Number of pages	4
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	8
Issue number	2
DOIs	https://doi.org/10.15017/1515848
Publication status	Published - Sep 2003

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@article{0066e831dfb346409093524c2f3296a2,

title = "Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film",

abstract = "Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800℃ for poly-Si_<0.6>Ge_<0.4> films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.",

author = "Isao Tsunoda and Taizoh Sadoh and Miyao, {Masanobu[et al]}",

year = "2003",

month = sep,

doi = "10.15017/1515848",

language = "English",

volume = "8",

pages = "151--154",

journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

issn = "1342-3819",

publisher = "Kyushu University, Faculty of Science",

number = "2",

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TY - JOUR

T1 - Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film

AU - Tsunoda, Isao

AU - Sadoh, Taizoh

AU - Miyao, Masanobu[et al]

PY - 2003/9

Y1 - 2003/9

N2 - Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800℃ for poly-Si_<0.6>Ge_<0.4> films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

AB - Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800℃ for poly-Si_<0.6>Ge_<0.4> films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

U2 - 10.15017/1515848

DO - 10.15017/1515848

M3 - Article

VL - 8

SP - 151

EP - 154

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 2

ER -

Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film

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