Furnace annealing behavior of B-doped poly-SiGe formed on insulating film

Isao Tsunoda, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume8
Issue number2
Publication statusPublished - Sep 1 2003

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Furnaces
Annealing
Atoms
Thermodynamic stability
Grain growth
Polysilicon
Grain boundaries
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

Furnace annealing behavior of B-doped poly-SiGe formed on insulating film. / Tsunoda, Isao; Sadoh, Taizoh; Miyao, Masanobu.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 8, No. 2, 01.09.2003, p. 151-154.

Research output: Contribution to journalArticle

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