Abstract
Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.
| Original language | English |
|---|---|
| Pages (from-to) | 151-154 |
| Number of pages | 4 |
| Journal | Research Reports on Information Science and Electrical Engineering of Kyushu University |
| Volume | 8 |
| Issue number | 2 |
| Publication status | Published - Sept 1 2003 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering