GaAs-MESFETS FABRICATED IN SOI LAYERS ON CRYSTALLINE Ca//x SR//1// minus //x F//2 INSULATOR FILMS.

K. Tsutsui, T. Asano, H. Ishiwara, S. Furukawa

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.

Original languageEnglish
Pages (from-to)755-758
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1986

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this