GaAs-MESFETS FABRICATED IN SOI LAYERS ON CRYSTALLINE Ca//x SR//1// minus //x F//2 INSULATOR FILMS.

K. Tsutsui, T. Asano, H. Ishiwara, S. Furukawa

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.

Original languageEnglish
Pages (from-to)755-758
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1986

Fingerprint

insulators
Semiconductor materials
Crystalline materials
field effect transistors
disorders
Field effect transistors
Molecular beam epitaxy
Electric properties
molecular beam epitaxy
electrical properties
retarding
degradation
Degradation
gallium arsenide
evaluation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

GaAs-MESFETS FABRICATED IN SOI LAYERS ON CRYSTALLINE Ca//x SR//1// minus //x F//2 INSULATOR FILMS. / Tsutsui, K.; Asano, T.; Ishiwara, H.; Furukawa, S.

In: Technical Digest - International Electron Devices Meeting, 01.12.1986, p. 755-758.

Research output: Contribution to journalConference article

@article{b2e08a5c9f764a51b2153dd13196306c,
title = "GaAs-MESFETS FABRICATED IN SOI LAYERS ON CRYSTALLINE Ca//x SR//1// minus //x F//2 INSULATOR FILMS.",
abstract = "Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.",
author = "K. Tsutsui and T. Asano and H. Ishiwara and S. Furukawa",
year = "1986",
month = "12",
day = "1",
language = "English",
pages = "755--758",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - GaAs-MESFETS FABRICATED IN SOI LAYERS ON CRYSTALLINE Ca//x SR//1// minus //x F//2 INSULATOR FILMS.

AU - Tsutsui, K.

AU - Asano, T.

AU - Ishiwara, H.

AU - Furukawa, S.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.

AB - Semiconductor on insulator (SOI)-GaAs structures of GaAs/Ca//x SR//1// minus //x F//2/GaAs(100) were grown by molecular beam epitaxy, and MESFETs were fabricated in the SOI layers for the first time. The two-step growth method was effective for good electrical properties of SOI films. The g//m value of 25mS/mm was obtained for an FET with L//g equals 3. 0 mu m, though it suffered mobility degradation from antiphase disorder. Evaluation of mobility showed that suppression of antiphase disorder leads to drastic improvement of the SOI-GaAs device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0023031440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023031440&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0023031440

SP - 755

EP - 758

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -