Gallium nitride power HEMT for high switching frequency power electronics

Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Citations (Scopus)

Abstract

Very large number of power semiconductor devices (semiconductor power switches) are used in power electronics systems such as AC-DC converter for PCs, DC-DC converters for CPU, motor driver systems and induction heating systems for home appliances, and GaN device is one of a promising candidate for future power devices thanks to the wide band gap semiconductor material property. In GaN base device research, the GaN-HEMT structure is widely investigated than the other device structures specially in RF technology field. This structure also suits to high switching frequency power electronics applications because of the high breakdown voltage and the inherent high speed characteristics of HEMT device. This paper describes the possibility of GaN-HEMT for power electronics applications specially focused on high switching frequency applications comparing the limit of silicon devices such as MOSFETs and IGBTs, and also describes latest research result including demonstration of high switching frequency power electronics circuit.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages781-786
Number of pages6
DOIs
Publication statusPublished - Dec 1 2007
Externally publishedYes
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: Dec 16 2007Dec 20 2007

Publication series

NameProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Other

Other14th International Workshop on the Physics of Semiconductor Devices, IWPSD
CountryIndia
CityMumbai
Period12/16/0712/20/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Gallium nitride power HEMT for high switching frequency power electronics'. Together they form a unique fingerprint.

  • Cite this

    Omura, I., Saito, W., Domon, T., & Tsuda, K. (2007). Gallium nitride power HEMT for high switching frequency power electronics. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 781-786). [4472634] (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472634