Gallium nitride power HEMT for high switching frequency power electronics

Ichiro Omura; Wataru Saito; Tomokazu Domon; Kunio Tsuda

doi:10.1109/IWPSD.2007.4472634

Gallium nitride power HEMT for high switching frequency power electronics

Ichiro Omura, Wataru Saito, Tomokazu Domon, Kunio Tsuda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

31 Citations (Scopus)

Abstract

Very large number of power semiconductor devices (semiconductor power switches) are used in power electronics systems such as AC-DC converter for PCs, DC-DC converters for CPU, motor driver systems and induction heating systems for home appliances, and GaN device is one of a promising candidate for future power devices thanks to the wide band gap semiconductor material property. In GaN base device research, the GaN-HEMT structure is widely investigated than the other device structures specially in RF technology field. This structure also suits to high switching frequency power electronics applications because of the high breakdown voltage and the inherent high speed characteristics of HEMT device. This paper describes the possibility of GaN-HEMT for power electronics applications specially focused on high switching frequency applications comparing the limit of silicon devices such as MOSFETs and IGBTs, and also describes latest research result including demonstration of high switching frequency power electronics circuit.

Original language	English
Title of host publication	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages	781-786
Number of pages	6
DOIs	https://doi.org/10.1109/IWPSD.2007.4472634
Publication status	Published - Dec 1 2007
Externally published	Yes
Event	14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India Duration: Dec 16 2007 → Dec 20 2007

Publication series

Name	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Other

Other	14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country	India
City	Mumbai
Period	12/16/07 → 12/20/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/IWPSD.2007.4472634

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Cite this

Omura, I., Saito, W., Domon, T., & Tsuda, K. (2007). Gallium nitride power HEMT for high switching frequency power electronics. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 781-786). [4472634] (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472634

Gallium nitride power HEMT for high switching frequency power electronics. / Omura, Ichiro; Saito, Wataru; Domon, Tomokazu; Tsuda, Kunio.

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 781-786 4472634 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Omura, I, Saito, W, Domon, T & Tsuda, K 2007, Gallium nitride power HEMT for high switching frequency power electronics. in Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD., 4472634, Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, pp. 781-786, 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, India, 12/16/07. https://doi.org/10.1109/IWPSD.2007.4472634

Omura I, Saito W, Domon T, Tsuda K. Gallium nitride power HEMT for high switching frequency power electronics. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 781-786. 4472634. (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472634

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