Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array

Takashi Kimura, Fujio Wakaya, Kenji Gamo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.

Original languageEnglish
Pages (from-to)4524-4527
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number7
Publication statusPublished - Jul 1 2001
Externally publishedYes

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galvanomagnetic effects
Galvanomagnetic effects
Magnetization reversal
Magnetization
Hall resistance
Magnetoresistance
magnetization
Magnetostatics
magnetostatics
interactions

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array. / Kimura, Takashi; Wakaya, Fujio; Gamo, Kenji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 7, 01.07.2001, p. 4524-4527.

Research output: Contribution to journalArticle

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