Abstract
The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.
| Original language | English |
|---|---|
| Pages (from-to) | 4524-4527 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 7 |
| Publication status | Published - Jul 1 2001 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array. / Kimura, Takashi; Wakaya, Fujio; Gamo, Kenji.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 7, 01.07.2001, p. 4524-4527.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array
AU - Kimura, Takashi
AU - Wakaya, Fujio
AU - Gamo, Kenji
PY - 2001/7/1
Y1 - 2001/7/1
N2 - The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.
AB - The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.
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UR - http://www.scopus.com/inward/citedby.url?scp=0035388678&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035388678
VL - 40
SP - 4524
EP - 4527
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -