Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array

Takashi Kimura; Fujio Wakaya; Kenji Gamo

doi:10.1143/jjap.40.4524

Galvanomagnetic effect and magnetization process in CoO/Co/NiFe film with antidot array

Takashi Kimura, Fujio Wakaya, Kenji Gamo

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.

Original language	English
Pages (from-to)	4524-4527
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	7
DOIs	https://doi.org/10.1143/jjap.40.4524
Publication status	Published - Jul 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.",

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AU - Kimura, Takashi

AU - Wakaya, Fujio

AU - Gamo, Kenji

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AB - The effects of antidot structures of the CoO layer in the CoO/Co/NiFe film were studied by measuring the magnetoresistance (MR) and Hall resistance (HR) of the films. In the MR and the HR, the resistance changes corresponding to the magnetization reversals of the antidot regions were observed, in addition to the main resistance changes caused by the magnetization reversals of the regions coupling with the CoO. This suggests that the domain structure in the Co/NiFe layer can be controlled by the patterned CoO. The magnetization of the covered region showed broad switching compared with that in the uniformly-coupled film because of the magnetostatic interaction caused by the magnetic charges at the boundary between the covered and uncovered regions.

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