Abstract
Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 357-360 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479962594 |
| DOIs | |
| Publication status | Published - Jun 12 2015 |
| Externally published | Yes |
| Event | 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China Duration: May 10 2015 → May 14 2015 |
Publication series
| Name | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
|---|---|
| Volume | 2015-June |
| ISSN (Print) | 1063-6854 |
Other
| Other | 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 |
|---|---|
| Country | China |
| City | Hong Kong |
| Period | 5/10/15 → 5/14/15 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform. / Nakajima, Akira; Nishizawa, Shin Ichi; Ohashi, Hiromichi; Kayanuma, Rei; Tsutsui, Kazuo; Kubota, Shunsuke; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Iwai, Hiroshi.
2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 357-360 7123463 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform
AU - Nakajima, Akira
AU - Nishizawa, Shin Ichi
AU - Ohashi, Hiromichi
AU - Kayanuma, Rei
AU - Tsutsui, Kazuo
AU - Kubota, Shunsuke
AU - Kakushima, Kuniyuki
AU - Wakabayashi, Hitoshi
AU - Iwai, Hiroshi
PY - 2015/6/12
Y1 - 2015/6/12
N2 - Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.
AB - Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84944687518&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84944687518&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2015.7123463
DO - 10.1109/ISPSD.2015.7123463
M3 - Conference contribution
AN - SCOPUS:84944687518
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 357
EP - 360
BT - 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -