GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Akira Nakajima, Shin Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.

Original languageEnglish
Title of host publication2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages357-360
Number of pages4
ISBN (Electronic)9781479962594
DOIs
Publication statusPublished - Jun 12 2015
Externally publishedYes
Event27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China
Duration: May 10 2015May 14 2015

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2015-June
ISSN (Print)1063-6854

Other

Other27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Country/TerritoryChina
CityHong Kong
Period5/10/155/14/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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