GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Akira Nakajima; Shin Ichi Nishizawa; Hiromichi Ohashi; Rei Kayanuma; Kazuo Tsutsui; Shunsuke Kubota; Kuniyuki Kakushima; Hitoshi Wakabayashi; Hiroshi Iwai

doi:10.1109/ISPSD.2015.7123463

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Akira Nakajima, Shin Ichi Nishizawa, Hiromichi Ohashi, Rei Kayanuma, Kazuo Tsutsui, Shunsuke Kubota, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.

Original language	English
Title of host publication	2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	357-360
Number of pages	4
ISBN (Electronic)	9781479962594
DOIs	https://doi.org/10.1109/ISPSD.2015.7123463
Publication status	Published - Jun 12 2015
Externally published	Yes
Event	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China Duration: May 10 2015 → May 14 2015

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2015-June
ISSN (Print)	1063-6854

Other

Other	27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Country/Territory	China
City	Hong Kong
Period	5/10/15 → 5/14/15

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2015.7123463

Cite this

Nakajima, A., Nishizawa, S. I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Wakabayashi, H., & Iwai, H. (2015). GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 357-360). [7123463] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123463

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform. / Nakajima, Akira; Nishizawa, Shin Ichi; Ohashi, Hiromichi et al.

2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 357-360 7123463 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakajima, A, Nishizawa, SI, Ohashi, H, Kayanuma, R, Tsutsui, K, Kubota, S, Kakushima, K, Wakabayashi, H & Iwai, H 2015, GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform. in 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015., 7123463, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2015-June, Institute of Electrical and Electronics Engineers Inc., pp. 357-360, 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015, Hong Kong, China, 5/10/15. https://doi.org/10.1109/ISPSD.2015.7123463

Nakajima A, Nishizawa SI, Ohashi H, Kayanuma R, Tsutsui K, Kubota S et al. GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 357-360. 7123463. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2015.7123463

Nakajima, Akira ; Nishizawa, Shin Ichi ; Ohashi, Hiromichi et al. / GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform. 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 357-360 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{5e5358cb6b014e949e2fdf24e43554c1,

title = "GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform",

abstract = "Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.",

author = "Akira Nakajima and Nishizawa, {Shin Ichi} and Hiromichi Ohashi and Rei Kayanuma and Kazuo Tsutsui and Shunsuke Kubota and Kuniyuki Kakushima and Hitoshi Wakabayashi and Hiroshi Iwai",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 ; Conference date: 10-05-2015 Through 14-05-2015",

year = "2015",

month = jun,

day = "12",

doi = "10.1109/ISPSD.2015.7123463",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "357--360",

booktitle = "2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015",

address = "United States",

}

TY - GEN

T1 - GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

AU - Nakajima, Akira

AU - Nishizawa, Shin Ichi

AU - Ohashi, Hiromichi

AU - Kayanuma, Rei

AU - Tsutsui, Kazuo

AU - Kubota, Shunsuke

AU - Kakushima, Kuniyuki

AU - Wakabayashi, Hitoshi

AU - Iwai, Hiroshi

PY - 2015/6/12

Y1 - 2015/6/12

N2 - Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.

AB - Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84944687518&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944687518&partnerID=8YFLogxK

U2 - 10.1109/ISPSD.2015.7123463

DO - 10.1109/ISPSD.2015.7123463

M3 - Conference contribution

AN - SCOPUS:84944687518

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 357

EP - 360

BT - 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015

Y2 - 10 May 2015 through 14 May 2015

ER -

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this