TY - GEN
T1 - GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform
AU - Nakajima, Akira
AU - Nishizawa, Shin Ichi
AU - Ohashi, Hiromichi
AU - Kayanuma, Rei
AU - Tsutsui, Kazuo
AU - Kubota, Shunsuke
AU - Kakushima, Kuniyuki
AU - Wakabayashi, Hitoshi
AU - Iwai, Hiroshi
PY - 2015/6/12
Y1 - 2015/6/12
N2 - Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.
AB - Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6-460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84944687518&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84944687518&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2015.7123463
DO - 10.1109/ISPSD.2015.7123463
M3 - Conference contribution
AN - SCOPUS:84944687518
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 357
EP - 360
BT - 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Y2 - 10 May 2015 through 14 May 2015
ER -