GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

Yuriko Matsuo, Nobuhiko Kawaguchi, Marie Fujino, Yoshihiro Kangawa, Yoshinao Kumagai, Irisawa Toshiharu Irisawa, Akinori Koukitu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.

Original languageEnglish
Pages (from-to)e1631-e1636
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
Publication statusPublished - Feb 15 2005
Externally publishedYes

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Substrates
Surface morphology
Desorption
desorption
Activation energy
pseudopotentials
activation energy
Experiments
energy
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Matsuo, Y., Kawaguchi, N., Fujino, M., Kangawa, Y., Kumagai, Y., Toshiharu Irisawa, I., & Koukitu, A. (2005). GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate. Journal of Crystal Growth, 275(1-2), e1631-e1636. https://doi.org/10.1016/j.jcrysgro.2004.11.215

GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate. / Matsuo, Yuriko; Kawaguchi, Nobuhiko; Fujino, Marie; Kangawa, Yoshihiro; Kumagai, Yoshinao; Toshiharu Irisawa, Irisawa; Koukitu, Akinori.

In: Journal of Crystal Growth, Vol. 275, No. 1-2, 15.02.2005, p. e1631-e1636.

Research output: Contribution to journalConference article

Matsuo, Y, Kawaguchi, N, Fujino, M, Kangawa, Y, Kumagai, Y, Toshiharu Irisawa, I & Koukitu, A 2005, 'GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate', Journal of Crystal Growth, vol. 275, no. 1-2, pp. e1631-e1636. https://doi.org/10.1016/j.jcrysgro.2004.11.215
Matsuo, Yuriko ; Kawaguchi, Nobuhiko ; Fujino, Marie ; Kangawa, Yoshihiro ; Kumagai, Yoshinao ; Toshiharu Irisawa, Irisawa ; Koukitu, Akinori. / GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate. In: Journal of Crystal Growth. 2005 ; Vol. 275, No. 1-2. pp. e1631-e1636.
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AU - Matsuo, Yuriko

AU - Kawaguchi, Nobuhiko

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AU - Kangawa, Yoshihiro

AU - Kumagai, Yoshinao

AU - Toshiharu Irisawa, Irisawa

AU - Koukitu, Akinori

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AB - GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.

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