GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

Yuriko Matsuo; Nobuhiko Kawaguchi; Marie Fujino; Yoshihiro Kangawa; Yoshinao Kumagai; Irisawa Toshiharu Irisawa; Akinori Koukitu

doi:10.1016/j.jcrysgro.2004.11.215

GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

Yuriko Matsuo, Nobuhiko Kawaguchi, Marie Fujino, Yoshihiro Kangawa, Yoshinao Kumagai, Irisawa Toshiharu Irisawa, Akinori Koukitu

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.

Original language	English
Pages (from-to)	e1631-e1636
Journal	Journal of Crystal Growth
Volume	275
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.11.215
Publication status	Published - Feb 15 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.11.215

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@article{3251c0609013405fbc99b0b31468803a,

title = "GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate",

abstract = "GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.",

author = "Yuriko Matsuo and Nobuhiko Kawaguchi and Marie Fujino and Yoshihiro Kangawa and Yoshinao Kumagai and {Toshiharu Irisawa}, Irisawa and Akinori Koukitu",

note = "Funding Information: The work was carried out under the 21st Century COE (Center of Excellence) program of “Future Nano-materials” in Tokyo University of Agriculture & Technology, and a Grant-in-Aid for Scientific Research (c) No.15360004 from the Ministry of Education, Science, Sports, and Culture. We also wish to express our appreciation to Prof. Y. Hagiwara of Tokyo University of Agriculture and Technology. The authors would like to express their sincere thanks to R. Togashi for calculations.",

year = "2005",

month = feb,

day = "15",

doi = "10.1016/j.jcrysgro.2004.11.215",

language = "English",

volume = "275",

pages = "e1631--e1636",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

AU - Matsuo, Yuriko

AU - Kawaguchi, Nobuhiko

AU - Fujino, Marie

AU - Kangawa, Yoshihiro

AU - Kumagai, Yoshinao

AU - Toshiharu Irisawa, Irisawa

AU - Koukitu, Akinori

N1 - Funding Information: The work was carried out under the 21st Century COE (Center of Excellence) program of “Future Nano-materials” in Tokyo University of Agriculture & Technology, and a Grant-in-Aid for Scientific Research (c) No.15360004 from the Ministry of Education, Science, Sports, and Culture. We also wish to express our appreciation to Prof. Y. Hagiwara of Tokyo University of Agriculture and Technology. The authors would like to express their sincere thanks to R. Togashi for calculations.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.

AB - GaN growth on GaP(1 1 1)A and (1 1 1)B surfaces are discussed using P desorption energy from the GaP(1 1 1) surfaces calculated by ab initio pseudopotential method and surface morphology of GaN layers on the GaP(1 1 1) substrates obtained by experiments. It was found that the activation energy for P desorption from GaP(1 1 1)A was smaller than that from GaP(1 1 1)B and these values depend on the surface morphology of GaN on GaP(1 1 1) surfaces. These results explain a finding that the GaP(1 1 1)A surface can promise an initial substrate for freestanding GaN substrate like GaAs(1 1 1)A surface.

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U2 - 10.1016/j.jcrysgro.2004.11.215

DO - 10.1016/j.jcrysgro.2004.11.215

M3 - Conference article

AN - SCOPUS:15944393496

SN - 0022-0248

VL - 275

SP - e1631-e1636

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

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