GaN growth process using GaP(1 1 1)A and (1 1 1)B surfaces as an initial substrate

Yuriko Matsuo, Nobuhiko Kawaguchi, Marie Fujino, Yoshihiro Kangawa, Yoshinao Kumagai, Irisawa Toshiharu Irisawa, Akinori Koukitu

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Engineering & Materials Science

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