GaN-HEMTs for high-voltage switching applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

GaN HEMTs can realize high-power-density operation with low power loss in power electronic systems due to ultra low specific on-resistance below the Si-limit. The dynamic on-resistance, however, is degraded by the current collapse phenomena. The relation between the dynamic on-resistance and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. Yellow luminescence intensity strongly related with current collapse phenomena and can be utilized as a useful index for improving the wafer quality. High speed switching was obtained at the turn-off switching test with an inductive load. The switching speed of the GaN-HEMT can be controlled by the external gate resistance as same manner as the conventional Si-MOSFET. For the compatibility with the same loss and dV/dt, the gate resistance must be set to 10 times higher than that at the Si-MOSFET due to low Q gd.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies
Pages43-49
Number of pages7
Edition8
DOIs
Publication statusPublished - Dec 1 2011
Externally publishedYes
EventGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Publication series

NameECS Transactions
Number8
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceGallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Saito, W. (2011). GaN-HEMTs for high-voltage switching applications. In Gallium Nitride and Silicon Carbide Power Technologies (8 ed., pp. 43-49). (ECS Transactions; Vol. 41, No. 8). https://doi.org/10.1149/1.3631485