TY - GEN
T1 - GaN-HEMTs for high-voltage switching applications
AU - Saito, Wataru
PY - 2011/12/1
Y1 - 2011/12/1
N2 - GaN HEMTs can realize high-power-density operation with low power loss in power electronic systems due to ultra low specific on-resistance below the Si-limit. The dynamic on-resistance, however, is degraded by the current collapse phenomena. The relation between the dynamic on-resistance and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. Yellow luminescence intensity strongly related with current collapse phenomena and can be utilized as a useful index for improving the wafer quality. High speed switching was obtained at the turn-off switching test with an inductive load. The switching speed of the GaN-HEMT can be controlled by the external gate resistance as same manner as the conventional Si-MOSFET. For the compatibility with the same loss and dV/dt, the gate resistance must be set to 10 times higher than that at the Si-MOSFET due to low Q gd.
AB - GaN HEMTs can realize high-power-density operation with low power loss in power electronic systems due to ultra low specific on-resistance below the Si-limit. The dynamic on-resistance, however, is degraded by the current collapse phenomena. The relation between the dynamic on-resistance and the maximum electric field peak showed universality, which was independent from the field plate (FP) structure and the wafer. The gate-edge electric field strongly affects the increase of the dynamic on-resistance. Yellow luminescence intensity strongly related with current collapse phenomena and can be utilized as a useful index for improving the wafer quality. High speed switching was obtained at the turn-off switching test with an inductive load. The switching speed of the GaN-HEMT can be controlled by the external gate resistance as same manner as the conventional Si-MOSFET. For the compatibility with the same loss and dV/dt, the gate resistance must be set to 10 times higher than that at the Si-MOSFET due to low Q gd.
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U2 - 10.1149/1.3631485
DO - 10.1149/1.3631485
M3 - Conference contribution
AN - SCOPUS:84857309296
SN - 9781566779081
T3 - ECS Transactions
SP - 43
EP - 49
BT - Gallium Nitride and Silicon Carbide Power Technologies
T2 - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting
Y2 - 9 October 2011 through 14 October 2011
ER -