GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Qingpeng Wang, Jin Ping Ao, Pangpang Wang, Ying Jiang, Liuan Li, Kazuya Kawaharada, Yang Liu

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V−1·s−1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

    Original languageEnglish
    Pages (from-to)151-155
    Number of pages5
    JournalFrontiers of Materials Science
    Volume9
    Issue number2
    DOIs
    Publication statusPublished - Jun 26 2015

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)

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