GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery

Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The overvoltage and surge energy robustness of GaN power high-electron-mobility transistors (HEMTs) is a key gap recently identified by the JEDEC JC-70.1 committee. This work presents the first study on the parametric shift and recovery of an industrial depletion-mode metal-insulator-semiconductor HEMT (MIS-HEMT) in repetitive overvoltage switching close to its dynamic breakdown voltage. In each switching cycle, a voltage overshoot of up to 90% of dynamic breakdown voltage was applied during the device turn-OFF process. As the repetitive switching prolongs, the device showed shifts in threshold voltage, saturation current, and on-resistance, and these parametric shifts saturated after 1-million cycles. These parametric shifts are believed to be induced by the trapping of the holes generated in the impact ionization. After the repetitive switching, the device exhibited slow recovery in the natural state, at elevated temperatures, or with negative gate biases, due to the difficulty in hole removal. By contrast, applying a positive gate bias or a positive substrate bias can facilitate the hole migration towards the two-dimensional-gas (2DEG) channel for recombination, and therefore, accelerated the device recovery. In particular, a 50-V substrate bias allowed the device to recover in a few minutes. This work shows the good overvoltage robustness of GaN MIS-HEMTs and unveils effective methods for their post-switching recovery, as well as suggests the significance of hole dynamics for the device overvoltage switching close to the dynamic breakdown voltage.

Original languageEnglish
Title of host publication2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages10B41-10B47
ISBN (Electronic)9781665479509
DOIs
Publication statusPublished - 2022
Externally publishedYes
Event2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, United States
Duration: Mar 27 2022Mar 31 2022

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2022-March
ISSN (Print)1541-7026

Conference

Conference2022 IEEE International Reliability Physics Symposium, IRPS 2022
Country/TerritoryUnited States
CityDallas
Period3/27/223/31/22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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