GaN quantum dots in AlxGa1-xN confined layer structures

S. Tanaka, H. Hirayama, S. Iwai, Y. Aoyagi

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Nanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metallorganic chemical vapor deposition (MOCVD)), by using a 'surfactant' which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x = 0 ≈ 0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.

Original languageEnglish
Pages (from-to)135-140
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
Publication statusPublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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