GaN quantum structures with fractional dimension -from quantum well to quantum dot

Tanaka Satoru, I. Suemune, P. Ramvall, Y. Aoyagi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.

Original languageEnglish
Pages (from-to)431-434
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
Publication statusPublished - Jan 1 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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