GaN quantum structures with various fractional dimensions were fabricated on AlxGa1-xN surfaces. The AlxGa1-xN surface was treated with a Si antisurfactant prior to the GaN deposition. This treatment was found to be effective in modifying the structural dimensions of the thin GaN layer. Without Si a GaN quantum well structure having a dimensionality of two was achieved in step flow growth mode. As the deposited amount of Si was increased, a morphological transition from quantum well (2D) to quantum dot (0D-like) occurred. At some Si doses the resulting structures possessed fractional dimensions. We observed that GaN quantum structures with various fractional dimensions could be controllably fabricated solely by varying the total amount of the deposited Si antisurfactant. A model concerning masking by Si-N bondings is introduced to explain the morphological transitions.
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - Jan 1 1999|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics