Gas Response of Oxide Semiconductor Film Devices under Control of Diffusion and Reaction Effects

Noboru Yamazoe, Kengo Shimanoe

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Sensor response of film semiconductor gas sensors to reducing gas under control of diffusion and reaction effects can be formulated as a function of film thickness and Hatta number based on recent theory of the receptor function of small crystals. The bell shaped dependence of the response on temperature can also be derived theoretically.

Original languageEnglish
Pages (from-to)658-661
Number of pages4
JournalProcedia Chemistry
Volume1
Issue number1
DOIs
Publication statusPublished - Sep 1 2009
EventEurosensors 23rd Conference - Lausanne, Switzerland
Duration: Sep 6 2009Sep 9 2009

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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