TY - JOUR
T1 - Gas sensing properties of C -axis-oriented Al-incorporated ZnO films epitaxially grown on (112-0) sapphire substrates using pulsed laser deposition
AU - Adachi, Yutaka
AU - Watanabe, Ken
AU - Saito, Noriko
AU - Sakaguchi, Isao
AU - Suzuki, Taku T.
N1 - Funding Information:
A part of this work was conducted in the Green Network of Excellence (GRENE), sponsored by the Japan Society for the Promotion of Science and the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan. This work was partly supported by JSPS KAKENHI Grand Number 15H01053.
Publisher Copyright:
© 2016 The Ceramic Society of Japan. All rights reserved.
PY - 2016/6
Y1 - 2016/6
N2 - Al-incorporated ZnO films with various Al concentrations were prepared using pulsed laser deposition on the (112-0) face of sapphire substrates, and their gas sensing properties were evaluated. The use of c-axis-oriented epitaxial films with the same thickness suppressed the influence of the surface-to-volume ratio and surface atomic arrangements on the sensing properties, clarifying the role of Al doping in the improvement of ZnO gas sensors. The results of ethanol gas sensing measurements indicated that Al doping significantly improved the sensing response and response time of the ZnO gas sensors. The formation of Al-related impurity phases and/or non-equilibrium defects induced by Al doping improved the sensing performance. On the other hand, changes in the grain size did not significantly affect the sensing response.
AB - Al-incorporated ZnO films with various Al concentrations were prepared using pulsed laser deposition on the (112-0) face of sapphire substrates, and their gas sensing properties were evaluated. The use of c-axis-oriented epitaxial films with the same thickness suppressed the influence of the surface-to-volume ratio and surface atomic arrangements on the sensing properties, clarifying the role of Al doping in the improvement of ZnO gas sensors. The results of ethanol gas sensing measurements indicated that Al doping significantly improved the sensing response and response time of the ZnO gas sensors. The formation of Al-related impurity phases and/or non-equilibrium defects induced by Al doping improved the sensing performance. On the other hand, changes in the grain size did not significantly affect the sensing response.
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U2 - 10.2109/jcersj2.15319
DO - 10.2109/jcersj2.15319
M3 - Article
AN - SCOPUS:84971645697
VL - 124
SP - 668
EP - 672
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 6
ER -