Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, K. Okumura

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Abstract

We describe gas-source molecular beam epitaxy (MBE) and luminescence characterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing the significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of "optical" quality. Excellent heterointerface transcience was evidenced by an almost perfect match between the spectral shift due to exciton confinement and the theoretical calculation. A good spatial uniformity in terms of well width and composition was obtained when QWs are grown in the adsorption/dissociation-limited growth regime.

Original languageEnglish
Pages (from-to)315-321
Number of pages7
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - Mar 1 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Fukatsu, S., Usami, N., Kato, Y., Sunamura, H., Shiraki, Y., Oku, H., Ohnishi, T., Ohmori, Y., & Okumura, K. (1994). Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells. Journal of Crystal Growth, 136(1-4), 315-321. https://doi.org/10.1016/0022-0248(94)90432-4