Gas-source molecular beam epitaxy of III-V nitrides

R. F. Davis, M. J. Paisley, Z. Sitar, D. J. Kester, K. S. Ailey, K. Linthicum, L. B. Rowland, S. Tanaka, R. S. Kern

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24 Citations (Scopus)

Abstract

Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.

Original languageEnglish
Pages (from-to)87-101
Number of pages15
JournalJournal of Crystal Growth
Volume178
Issue number1-2
DOIs
Publication statusPublished - Jun 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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