TY - JOUR
T1 - Gas-source molecular beam epitaxy of III-V nitrides
AU - Davis, R. F.
AU - Paisley, M. J.
AU - Sitar, Z.
AU - Kester, D. J.
AU - Ailey, K. S.
AU - Linthicum, K.
AU - Rowland, L. B.
AU - Tanaka, S.
AU - Kern, R. S.
N1 - Funding Information:
The authors express theiarp preciationto the ElectronicM aterialsCenter of Kobe Steel, USA, the BMDO through the ONR (contract #No. 00014-96-1-076a5n) d ONR contractN o. 0014-92-J-1427 for supporto f this researcha nd to Professor D.R. McKenzie of the University of Sydney for helpfuld iscussionA. portion of the electronm icro-scopy was performed in the High-Temperature Materials Laboratory User Facility of the Oak Ridge National Laboratorys ponsoredb y the US Departmento f Energy, Assistant Secretarfoyr Conservationa nd Renewable Energy, Office of Transportation Technologies, under contract DE AC05840RO21400a nd managedb y Martin Marietta Energy SystemsI,n c.
PY - 1997/6
Y1 - 1997/6
N2 - Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.
AB - Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(1 0 0) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0 0 0 1) is the most commonly employed substrate with 6H-SiC(0 0 0 1), ZnO(1 1 1) and Si(1 1 1) also being used primarily for the growth of wurtzite GaN(0 0 0 1) in tandem with previously deposited GaN(0 0 0 1) or AlN(0 0 0 1) buffer layers. Silicon(0 0 1), GaAs(0 0 1), GaP(0 0 1) and 3C-SiC(0 0 1) have been employed for growth of cubic (zincblende) β-GaN(0 0 1). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 ± 50°C to 800 ± 50°C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.
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U2 - 10.1016/S0022-0248(97)00077-8
DO - 10.1016/S0022-0248(97)00077-8
M3 - Article
AN - SCOPUS:0031150299
SN - 0022-0248
VL - 178
SP - 87
EP - 101
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -