Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

L. B. Rowland, R. S. Kern, Tanaka Satoru, Robert F. Davis

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Single-crystal epitaxial films of cubic /3(3C)-SiC(lll) have been deposited on hexagonal a(6H)-SiC(0001) substrates oriented 3-4° toward [1120] at 1050–1250 °C via gas-source molecular beam epitaxy using disilane (Si2H6 and ethylene (C2H4). High-resolution transmission electron microscopy revealed that the nucleation and growth of the β(3C)-SiC regions occurred primarily on terraces between closely spaced steps because of reduced rates of surface migration at the low growth temperatures. Double positioning boundaries were observed at the intersections of these regions.

Original languageEnglish
Pages (from-to)2753-2756
Number of pages4
JournalJournal of Materials Research
Volume8
Issue number11
DOIs
Publication statusPublished - Jan 1 1993
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
Nucleation
molecular beam epitaxy
Single crystals
Substrates
gases
intersections
positioning
ethylene
nucleation
transmission electron microscopy
high resolution
single crystals
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC. / Rowland, L. B.; Kern, R. S.; Satoru, Tanaka; Davis, Robert F.

In: Journal of Materials Research, Vol. 8, No. 11, 01.01.1993, p. 2753-2756.

Research output: Contribution to journalArticle

Rowland, L. B. ; Kern, R. S. ; Satoru, Tanaka ; Davis, Robert F. / Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC. In: Journal of Materials Research. 1993 ; Vol. 8, No. 11. pp. 2753-2756.
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