Gas species dependent charge build-up in reactive ion etching

Kiyoshi Arita, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingOther chapter contribution

Abstract

The effects of gas species on the charge build-up in reactive ion etching (RIE) have been investigated. The charge build-up was evaluated using metal/nitride/oxide/silicon (MNOS) capacitors and metal/oxide/silicon (MOS) capacitors. It was found that etching with electronegative gases such as O2 and CF4 results in considerable charge build-up. The spatial distribution of plasma parameters was diagnosed using a Langmuir probe. It was found that the spatial distribution of plasma parameters is non-uniform in plasmas of negative gases, while it is uniform in H2, He, Ar, and Xe gas plasmas. The results suggest that we must take the effect of the gas species into consideration for the nonuniformity in a plasma, which causes the significant charge build-up. Models that can be used to explain the effect of gas species are discussed. It was also found that the charge build-up can be drastically reduced by adding H2 gas to negative gases.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
EditorsY. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, al et al
Pages6347-6695
Number of pages349
Volume35
Edition12 B
Publication statusPublished - Dec 1996
Externally publishedYes
EventProceedings of the 1996 9th International MicroProcess Conference, MPC'96 - Kyushu, Jpn
Duration: Jul 8 1996Jul 11 1996

Other

OtherProceedings of the 1996 9th International MicroProcess Conference, MPC'96
CityKyushu, Jpn
Period7/8/967/11/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Arita, K., & Asano, T. (1996). Gas species dependent charge build-up in reactive ion etching. In Y. Aoyagi, N. Atoda, T. Fukui, M. Komuro, M. Kotera, & A. et al (Eds.), Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (12 B ed., Vol. 35, pp. 6347-6695)