Gas species dependent charge build-up in reactive ion etching

Kiyoshi Arita, Tanemasa Asano

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effects of gas species on the charge build-up in reactive ion etching (RIE) have been investigated. The charge build-up was evaluated using metal/nitride/oxide/silicon (MNOS) capacitors and metal/oxide/silicon (MOS) capacitors. It was found that etching with electronegative gases such as O2 and CF4 results in considerable charge build-up. The spatial distribution of plasma parameters was diagnosed using a Langmuir probe. It was found that the spatial distribution of plasma parameters is non-uniform in plasmas of negative gases,while it is uniform in H2, He, Ar, and Xe gas plasmas. The results suggest that we must take the effect of the gas species into consideration for the nonuniformity in a plasma, which causes the significant charge build-up. Models that can be used to explain the effect of gas species are discussed. It was also found that the charge build-up can be drastically reduced by adding H2 gas to negative gases.

Original languageEnglish
Pages (from-to)6534-6539
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number12 SUPPL. B
Publication statusPublished - Dec 1 1996

Fingerprint

Reactive ion etching
etching
Gases
gases
Plasmas
ions
Silicon oxides
Spatial distribution
capacitors
spatial distribution
Capacitors
metal-nitride-oxide-silicon
Langmuir probes
electrostatic probes
Metals
Nitrides
nonuniformity
metal oxides
Etching
causes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Gas species dependent charge build-up in reactive ion etching. / Arita, Kiyoshi; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 12 SUPPL. B, 01.12.1996, p. 6534-6539.

Research output: Contribution to journalArticle

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