Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu, Koji Muraki

    Research output: Contribution to journalArticle

    26 Citations (Scopus)

    Abstract

    We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

    Original languageEnglish
    Article number245309
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume91
    Issue number24
    DOIs
    Publication statusPublished - Jun 18 2015

    Fingerprint

    Metalloids
    metalloids
    Heterojunctions
    insulators
    Electric potential
    Energy gap
    Electric fields
    electric potential
    retarding
    inversions
    conduction
    temperature dependence
    electric fields
    Temperature
    indium arsenide

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure. / Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji; Muraki, Koji.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 24, 245309, 18.06.2015.

    Research output: Contribution to journalArticle

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    AB - We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

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