Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu, Koji Muraki

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

Original languageEnglish
Article number245309
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number24
DOIs
Publication statusPublished - Jun 18 2015
Externally publishedYes

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Metalloids
metalloids
Heterojunctions
insulators
Electric potential
Energy gap
Electric fields
electric potential
retarding
inversions
conduction
temperature dependence
electric fields
Temperature
indium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure. / Suzuki, Kyoichi; Harada, Yuichi; Onomitsu, Koji; Muraki, Koji.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 24, 245309, 18.06.2015.

Research output: Contribution to journalArticle

@article{d0f063aa5f874a47a13d0dbabab3086b,
title = "Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure",
abstract = "We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.",
author = "Kyoichi Suzuki and Yuichi Harada and Koji Onomitsu and Koji Muraki",
year = "2015",
month = "6",
day = "18",
doi = "10.1103/PhysRevB.91.245309",
language = "English",
volume = "91",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

TY - JOUR

T1 - Gate-controlled semimetal-topological insulator transition in an InAs/GaSb heterostructure

AU - Suzuki, Kyoichi

AU - Harada, Yuichi

AU - Onomitsu, Koji

AU - Muraki, Koji

PY - 2015/6/18

Y1 - 2015/6/18

N2 - We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

AB - We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front- and back-gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample for different current paths without the influence of time-dependent resistance fluctuations.

UR - http://www.scopus.com/inward/record.url?scp=84936818728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84936818728&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.91.245309

DO - 10.1103/PhysRevB.91.245309

M3 - Article

VL - 91

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 24

M1 - 245309

ER -