Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer

Kyoichi Suzuki, Yuichi Harada, Fumihiko Maeda, Koji Onomitsu, Toru Yamaguchi, Koji Muraki

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

Original languageEnglish
Article number125702
JournalApplied Physics Express
Volume4
Issue number12
DOIs
Publication statusPublished - Dec 1 2011
Externally publishedYes

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Electron traps
Atomic layer deposition
Equivalent circuits
Hysteresis
Surface treatment
Heterojunctions
Water
traps
atomic layer epitaxy
surface treatment
equivalent circuits
caps
hysteresis
causes
water
electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer. / Suzuki, Kyoichi; Harada, Yuichi; Maeda, Fumihiko; Onomitsu, Koji; Yamaguchi, Toru; Muraki, Koji.

In: Applied Physics Express, Vol. 4, No. 12, 125702, 01.12.2011.

Research output: Contribution to journalArticle

Suzuki, Kyoichi ; Harada, Yuichi ; Maeda, Fumihiko ; Onomitsu, Koji ; Yamaguchi, Toru ; Muraki, Koji. / Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer. In: Applied Physics Express. 2011 ; Vol. 4, No. 12.
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