Gate operation of InAs/AlGaSb heterostructures with an atomic-layer- deposited insulating layer

Kyoichi Suzuki, Yuichi Harada, Fumihiko Maeda, Koji Onomitsu, Toru Yamaguchi, Koji Muraki

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al 2O 3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al 2O 3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D it ∼ 10 13cm -2eV -1, which is reduced to well below 10 12 cm -2eV -1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

Original languageEnglish
Article number125702
JournalApplied Physics Express
Volume4
Issue number12
DOIs
Publication statusPublished - Dec 1 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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