Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS, high-quality gate-stack and source/drain (S/D) junction formations are essential. We fabricated Ge n- and p-MOSFETs using the gate-stack formation by bilayer (SiO2/GeO2) passivation and using S/D junction formations by thermal diffusion of P and ion implantation of B. The electron and hole channel mobilities of the fabricated MOSFETs were 1097 and 376 cm 2V-1s-1, respectively, despite the very thin GeO2 thickness. We will present the detailed fabrication method and device performance.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages205-216
Number of pages12
Volume50
Edition9
DOIs
Publication statusPublished - Dec 1 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Nakashima, H., Yamamoto, K., Yang, H., & Wang, D. (2012). Gate stack and source/drain junction formations for high-mobility Ge MOSFETs. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., Vol. 50, pp. 205-216) https://doi.org/10.1149/05009.0205ecst