Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Ge is of great interest as a candidate channel material for future CMOS devices due to its high intrinsic carrier mobility. To translate this potential into CMOS, high-quality gate-stack and source/drain (S/D) junction formations are essential. We fabricated Ge n- and p-MOSFETs using the gate-stack formation by bilayer (SiO2/GeO2) passivation and using S/D junction formations by thermal diffusion of P and ion implantation of B. The electron and hole channel mobilities of the fabricated MOSFETs were 1097 and 376 cm 2V-1s-1, respectively, despite the very thin GeO2 thickness. We will present the detailed fabrication method and device performance.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages205-216
Number of pages12
Edition9
DOIs
Publication statusPublished - 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Gate stack and source/drain junction formations for high-mobility Ge MOSFETs'. Together they form a unique fingerprint.

Cite this