Gate-Tunable Dirac Point of Molecular Doped Graphene

Pablo Solís-Fernández, Susumu Okada, Tohru Sato, Masaharu Tsuji, Hiroki Ago

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

Control of the type and density of charge carriers in graphene is essential for its implementation into various practical applications. Here, we demonstrate the gate-tunable doping effect of adsorbed piperidine on graphene. By gradually increasing the amount of adsorbed piperidine, the graphene doping level can be varied from p-to n-type, with the formation of p-n junctions for intermediate coverages. Moreover, the doping effect of the piperidine can be further tuned by the application of large negative back-gate voltages, which increase the doping level of graphene. In addition, the electronic properties of graphene are well preserved due to the noncovalent nature of the interaction between piperidine and graphene. This gate-tunable doping offers an easy, controllable, and nonintrusive method to alter the electronic structure of graphene.

Original languageEnglish
Pages (from-to)2930-2939
Number of pages10
JournalACS nano
Volume10
Issue number2
DOIs
Publication statusPublished - Feb 23 2016

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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