Gate-Tunable Dirac Point of Molecular Doped Graphene

Pablo Solís-Fernández, Susumu Okada, Tohru Sato, Masaharu Tsuji, Hiroki Ago

    Research output: Contribution to journalArticle

    25 Citations (Scopus)

    Abstract

    Control of the type and density of charge carriers in graphene is essential for its implementation into various practical applications. Here, we demonstrate the gate-tunable doping effect of adsorbed piperidine on graphene. By gradually increasing the amount of adsorbed piperidine, the graphene doping level can be varied from p-to n-type, with the formation of p-n junctions for intermediate coverages. Moreover, the doping effect of the piperidine can be further tuned by the application of large negative back-gate voltages, which increase the doping level of graphene. In addition, the electronic properties of graphene are well preserved due to the noncovalent nature of the interaction between piperidine and graphene. This gate-tunable doping offers an easy, controllable, and nonintrusive method to alter the electronic structure of graphene.

    Original languageEnglish
    Pages (from-to)2930-2939
    Number of pages10
    JournalACS Nano
    Volume10
    Issue number2
    DOIs
    Publication statusPublished - Feb 23 2016

    Fingerprint

    Graphite
    Graphene
    graphene
    piperidine
    Doping (additives)
    Charge carriers
    p-n junctions
    Electronic properties
    Electronic structure
    charge carriers
    electronic structure
    Electric potential
    electric potential
    electronics

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Solís-Fernández, P., Okada, S., Sato, T., Tsuji, M., & Ago, H. (2016). Gate-Tunable Dirac Point of Molecular Doped Graphene. ACS Nano, 10(2), 2930-2939. https://doi.org/10.1021/acsnano.6b00064

    Gate-Tunable Dirac Point of Molecular Doped Graphene. / Solís-Fernández, Pablo; Okada, Susumu; Sato, Tohru; Tsuji, Masaharu; Ago, Hiroki.

    In: ACS Nano, Vol. 10, No. 2, 23.02.2016, p. 2930-2939.

    Research output: Contribution to journalArticle

    Solís-Fernández, P, Okada, S, Sato, T, Tsuji, M & Ago, H 2016, 'Gate-Tunable Dirac Point of Molecular Doped Graphene', ACS Nano, vol. 10, no. 2, pp. 2930-2939. https://doi.org/10.1021/acsnano.6b00064
    Solís-Fernández P, Okada S, Sato T, Tsuji M, Ago H. Gate-Tunable Dirac Point of Molecular Doped Graphene. ACS Nano. 2016 Feb 23;10(2):2930-2939. https://doi.org/10.1021/acsnano.6b00064
    Solís-Fernández, Pablo ; Okada, Susumu ; Sato, Tohru ; Tsuji, Masaharu ; Ago, Hiroki. / Gate-Tunable Dirac Point of Molecular Doped Graphene. In: ACS Nano. 2016 ; Vol. 10, No. 2. pp. 2930-2939.
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