Abstract
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.
| Original language | English |
|---|---|
| Article number | 166102 |
| Journal | Physical Review Letters |
| Volume | 116 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - Apr 21 2016 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene. / Dushenko, S.; Ago, H.; Kawahara, K.; Tsuda, T.; Kuwabata, S.; Takenobu, T.; Shinjo, T.; Ando, Y.; Shiraishi, M.
In: Physical Review Letters, Vol. 116, No. 16, 166102, 21.04.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene
AU - Dushenko, S.
AU - Ago, H.
AU - Kawahara, K.
AU - Tsuda, T.
AU - Kuwabata, S.
AU - Takenobu, T.
AU - Shinjo, T.
AU - Ando, Y.
AU - Shiraishi, M.
PY - 2016/4/21
Y1 - 2016/4/21
N2 - The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.
AB - The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.
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U2 - 10.1103/PhysRevLett.116.166102
DO - 10.1103/PhysRevLett.116.166102
M3 - Article
AN - SCOPUS:84964303779
VL - 116
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 16
M1 - 166102
ER -