Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene

S. Dushenko, H. Ago, K. Kawahara, T. Tsuda, S. Kuwabata, T. Takenobu, T. Shinjo, Y. Ando, M. Shiraishi

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    40 Citations (Scopus)

    Abstract

    The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.

    Original languageEnglish
    Article number166102
    JournalPhysical Review Letters
    Volume116
    Issue number16
    DOIs
    Publication statusPublished - Apr 21 2016

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

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  • Cite this

    Dushenko, S., Ago, H., Kawahara, K., Tsuda, T., Kuwabata, S., Takenobu, T., Shinjo, T., Ando, Y., & Shiraishi, M. (2016). Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene. Physical Review Letters, 116(16), [166102]. https://doi.org/10.1103/PhysRevLett.116.166102