Gated Si field emitter array prepared by using anodization

Katsuya Higa, Kiyoaki Nishii, Tanemasa Asano

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Abstract

High aspect-ratio gated field emitter arrays have been fabricated using silicon tip prepared by the anodization of a silicon wafer with periodic nip junctions. The tips were formed by the preferential growth of porous silicon in p-type material and were transferred to a separate silicon substrate by direct bonding. Gate electrodes were then formed by depositing a WSi2 film over the tips, and apertures were subsequently created by etching with an argon milling process. The resulting gated tip arrays demonstrated field emission, although higher than usual gate voltages were required.

Original languageEnglish
Pages (from-to)651-653
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number2
Publication statusPublished - Mar 1 1998

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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