Ge-dependent morphological change in poly-SiGe formed by Ni-mediated crystallization

T. Sadoh, H. Kanno, A. Kenjo, M. Miyao

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Low-temperature (≤550°C) Ni-mediated crystallization of amorphous SiGe (a-Si 1-x Ge x (0≤x≤1)) layers on SiO 2 films has been investigated. The morphology of crystallized SiGe strongly depended on the Ge fraction. For low Ge fractions (<20%), Ge-doping enhanced plane growth was observed, which resulted in strain-free poly-Si 0.8 Ge 0.2 films with large grains (18μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions (40-60%). Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. Very sharp needle-like crystals (width: 0.05μm, length: 10μm) were obtained at the optimized growth conditions (Ge fraction: 40%, annealing: 450°C, 20h). These new poly-SiGe films on insulator should be utilized for the advanced system-in-displays and novel devices such as one-dimensional quantum wires.

Original languageEnglish
Pages (from-to)227-230
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - Mar 15 2004

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this