TY - JOUR
T1 - Ge-dependent morphological change in poly-SiGe formed by Ni-mediated crystallization
AU - Sadoh, T.
AU - Kanno, H.
AU - Kenjo, A.
AU - Miyao, M.
N1 - Funding Information:
The authors are very grateful to Dr. S. Yamaguchi of C.R.L., Hitachi for his stimulating discussions. A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.
PY - 2004/3/15
Y1 - 2004/3/15
N2 - Low-temperature (≤550°C) Ni-mediated crystallization of amorphous SiGe (a-Si 1-x Ge x (0≤x≤1)) layers on SiO 2 films has been investigated. The morphology of crystallized SiGe strongly depended on the Ge fraction. For low Ge fractions (<20%), Ge-doping enhanced plane growth was observed, which resulted in strain-free poly-Si 0.8 Ge 0.2 films with large grains (18μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions (40-60%). Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. Very sharp needle-like crystals (width: 0.05μm, length: 10μm) were obtained at the optimized growth conditions (Ge fraction: 40%, annealing: 450°C, 20h). These new poly-SiGe films on insulator should be utilized for the advanced system-in-displays and novel devices such as one-dimensional quantum wires.
AB - Low-temperature (≤550°C) Ni-mediated crystallization of amorphous SiGe (a-Si 1-x Ge x (0≤x≤1)) layers on SiO 2 films has been investigated. The morphology of crystallized SiGe strongly depended on the Ge fraction. For low Ge fractions (<20%), Ge-doping enhanced plane growth was observed, which resulted in strain-free poly-Si 0.8 Ge 0.2 films with large grains (18μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions (40-60%). Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. Very sharp needle-like crystals (width: 0.05μm, length: 10μm) were obtained at the optimized growth conditions (Ge fraction: 40%, annealing: 450°C, 20h). These new poly-SiGe films on insulator should be utilized for the advanced system-in-displays and novel devices such as one-dimensional quantum wires.
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U2 - 10.1016/j.apsusc.2003.08.050
DO - 10.1016/j.apsusc.2003.08.050
M3 - Article
AN - SCOPUS:1142304514
VL - 224
SP - 227
EP - 230
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -