Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure

Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.mssp.2004.09.036

Ge-enhanced MILC velocity in a-Ge/a-Si/SiO₂ layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO₂ layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO₂ single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

Original language	English
Pages (from-to)	83-88
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mssp.2004.09.036
Publication status	Published - Feb 2005

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2004.09.036

Cite this

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title = "Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure",

abstract = "Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.",

author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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T1 - Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2005/2

Y1 - 2005/2

N2 - Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

AB - Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas (∼10 μm for 5 h and ∼30 μm for 15 h) were obtained after 550 °C annealing. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large-scale integrated circuits.

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IS - 1-3 SPEC. ISS.

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Ge-enhanced MILC velocity in a-Ge/a-Si/SiO₂ layered structure

Abstract

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