Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures

Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.

Original languageEnglish
Pages (from-to)451-454
Number of pages4
JournalJournal of the Korean Physical Society
Volume54
Issue number1 PART 2
Publication statusPublished - Jan 1 2009

Fingerprint

crystallization
inversions
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures. / Kurosawa, Masashi; Tsumura, Yoshitaka; Sadoh, Taizoh; Miyao, Masanobu.

In: Journal of the Korean Physical Society, Vol. 54, No. 1 PART 2, 01.01.2009, p. 451-454.

Research output: Contribution to journalArticle

Kurosawa, Masashi ; Tsumura, Yoshitaka ; Sadoh, Taizoh ; Miyao, Masanobu. / Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures. In: Journal of the Korean Physical Society. 2009 ; Vol. 54, No. 1 PART 2. pp. 451-454.
@article{7bf1c7fceabc4f6091040d322d10b976,
title = "Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures",
abstract = "Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.",
author = "Masashi Kurosawa and Yoshitaka Tsumura and Taizoh Sadoh and Masanobu Miyao",
year = "2009",
month = "1",
day = "1",
language = "English",
volume = "54",
pages = "451--454",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "1 PART 2",

}

TY - JOUR

T1 - Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures

AU - Kurosawa, Masashi

AU - Tsumura, Yoshitaka

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.

AB - Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.

UR - http://www.scopus.com/inward/record.url?scp=60149098463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60149098463&partnerID=8YFLogxK

M3 - Article

VL - 54

SP - 451

EP - 454

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1 PART 2

ER -