Ge fraction dependence of Al-induced crystallization of SiGe at low temperatures

Masashi Kurosawa, Yoshitaka Tsumura, Taizoh Sadoh, Masanobu Miyao

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4 Citations (Scopus)


Al-induced crystallization of Si1-xGex films (x=0-0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on in-sulating films at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 °C, 20 h) and inversion of Si/Al layers occurred completely. For Si1-xGex samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.

Original languageEnglish
Pages (from-to)451-454
Number of pages4
JournalJournal of the Korean Physical Society
Issue number1 PART 2
Publication statusPublished - Jan 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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