Ge fraction dependent improved thermal stability of in situ doped boron in polycrystalline Si 1-xGe x (0≤x≤0.5) films on SiON

Masanobu Miyao, Isao Tsunoda, Taizoh Sadoh, Akihiro Miyauchi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Postannealing characteristics of in situ doped B atoms in poly- Si1-x Gex (x≤0.5) films on SiON have been investigated. Supersaturated electrically active B (2× 1020 cm-3) is obtained for as-chemical vapor deposition samples, and their thermal stability is significantly improved by increasing Ge fraction, e.g., the stability for poly- Si0.6 Ge0.4 is ten times as high as that for poly-Si at 700-800°C. Such a Ge induced improvement will be a powerful tool to achieve poly-SiGe gate electrode for the next generation ultralarge scale integrated circuits. In addition, the deactivation process of electrically active B has been analyzed. Results indicated that deactivation processes consist of fast and slow processes. The former is due to movement of B atoms from substitutional to interstitial sites, which is enhanced by a local strain induced by the difference in atomic radii between Si and B atoms. The slow process was due to trapping of B at grain boundaries during grain growth. The two-state model based on the local strain compensation by Ge doping is proposed, which can well explain the Ge dependent thermal stability of electrically active B atoms.

Original languageEnglish
Article number054909
JournalJournal of Applied Physics
Volume97
Issue number5
DOIs
Publication statusPublished - Jun 27 2005

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boron
thermal stability
deactivation
atoms
integrated circuits
interstitials
grain boundaries
trapping
vapor deposition
radii
electrodes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ge fraction dependent improved thermal stability of in situ doped boron in polycrystalline Si 1-xGe x (0≤x≤0.5) films on SiON. / Miyao, Masanobu; Tsunoda, Isao; Sadoh, Taizoh; Miyauchi, Akihiro.

In: Journal of Applied Physics, Vol. 97, No. 5, 054909, 27.06.2005.

Research output: Contribution to journalArticle

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AU - Sadoh, Taizoh

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N2 - Postannealing characteristics of in situ doped B atoms in poly- Si1-x Gex (x≤0.5) films on SiON have been investigated. Supersaturated electrically active B (2× 1020 cm-3) is obtained for as-chemical vapor deposition samples, and their thermal stability is significantly improved by increasing Ge fraction, e.g., the stability for poly- Si0.6 Ge0.4 is ten times as high as that for poly-Si at 700-800°C. Such a Ge induced improvement will be a powerful tool to achieve poly-SiGe gate electrode for the next generation ultralarge scale integrated circuits. In addition, the deactivation process of electrically active B has been analyzed. Results indicated that deactivation processes consist of fast and slow processes. The former is due to movement of B atoms from substitutional to interstitial sites, which is enhanced by a local strain induced by the difference in atomic radii between Si and B atoms. The slow process was due to trapping of B at grain boundaries during grain growth. The two-state model based on the local strain compensation by Ge doping is proposed, which can well explain the Ge dependent thermal stability of electrically active B atoms.

AB - Postannealing characteristics of in situ doped B atoms in poly- Si1-x Gex (x≤0.5) films on SiON have been investigated. Supersaturated electrically active B (2× 1020 cm-3) is obtained for as-chemical vapor deposition samples, and their thermal stability is significantly improved by increasing Ge fraction, e.g., the stability for poly- Si0.6 Ge0.4 is ten times as high as that for poly-Si at 700-800°C. Such a Ge induced improvement will be a powerful tool to achieve poly-SiGe gate electrode for the next generation ultralarge scale integrated circuits. In addition, the deactivation process of electrically active B has been analyzed. Results indicated that deactivation processes consist of fast and slow processes. The former is due to movement of B atoms from substitutional to interstitial sites, which is enhanced by a local strain induced by the difference in atomic radii between Si and B atoms. The slow process was due to trapping of B at grain boundaries during grain growth. The two-state model based on the local strain compensation by Ge doping is proposed, which can well explain the Ge dependent thermal stability of electrically active B atoms.

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