Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2

Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

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Abstract

The metal-induced low-temperature crystallization (MILC) of amorphous Si1-xGex on SiO2 was investigated. It was found that the growth velocity of MILC-Si1-xGex enhanced by 80% by increasing Ge fraction from 0% to 20% achieved poly-Si0.8Ge0.2 with large grains. Very sharp needle-like crystal regions were also obtained by optimizing the growth conditions.

Original languageEnglish
Pages (from-to)2148-2150
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number13
DOIs
Publication statusPublished - Mar 31 2003

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crystallization
needles
metals
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2 . / Kanno, Hiroshi; Tsunoda, Isao; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 82, No. 13, 31.03.2003, p. 2148-2150.

Research output: Contribution to journalArticle

Kanno, Hiroshi ; Tsunoda, Isao ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≤x≤1) on SiO2 . In: Applied Physics Letters. 2003 ; Vol. 82, No. 13. pp. 2148-2150.
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