Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

X. J. Chen, S. Nakano, L. J. Liu, K. Kakimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A gedanken experiment was carried out to investigate point defects formed in unidirectional solidified single crystalline silicon for solar cells, ignoring dislocations in crystals. A transient global model was used to obtain the solution of a thermal field within the entire furnace. Then, based on the global solution of heat transfer, diffusion and recombination of vacancies and interstitials were calculated by the Finite Volume Method (FVM). It was found that vacancies became dominant as the melt was solidified and solidification time was reduced. The ratio between growth rate Vg and temperature gradient in growth direction G was also analyzed. The results revealed that growth rate is the key factor affecting point defects in single crystalline silicon with no dislocations.

Original languageEnglish
Pages (from-to)192-197
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number2
DOIs
Publication statusPublished - Jan 1 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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