Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

X. J. Chen, S. Nakano, L. J. Liu, Koichi Kakimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A gedanken experiment was carried out to investigate point defects formed in unidirectional solidified single crystalline silicon for solar cells, ignoring dislocations in crystals. A transient global model was used to obtain the solution of a thermal field within the entire furnace. Then, based on the global solution of heat transfer, diffusion and recombination of vacancies and interstitials were calculated by the Finite Volume Method (FVM). It was found that vacancies became dominant as the melt was solidified and solidification time was reduced. The ratio between growth rate Vg and temperature gradient in growth direction G was also analyzed. The results revealed that growth rate is the key factor affecting point defects in single crystalline silicon with no dislocations.

Original languageEnglish
Pages (from-to)192-197
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number2
DOIs
Publication statusPublished - Jan 1 2010

Fingerprint

Silicon
Point defects
Dislocations (crystals)
point defects
Vacancies
Crystalline materials
Finite volume method
Growth temperature
silicon
Thermal gradients
Solidification
Solar cells
Furnaces
Experiments
finite volume method
Heat transfer
Crystals
solidification
furnaces
temperature gradients

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations. / Chen, X. J.; Nakano, S.; Liu, L. J.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 312, No. 2, 01.01.2010, p. 192-197.

Research output: Contribution to journalArticle

@article{0017e9a82ec94432b32d986e80d82e64,
title = "Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations",
abstract = "A gedanken experiment was carried out to investigate point defects formed in unidirectional solidified single crystalline silicon for solar cells, ignoring dislocations in crystals. A transient global model was used to obtain the solution of a thermal field within the entire furnace. Then, based on the global solution of heat transfer, diffusion and recombination of vacancies and interstitials were calculated by the Finite Volume Method (FVM). It was found that vacancies became dominant as the melt was solidified and solidification time was reduced. The ratio between growth rate Vg and temperature gradient in growth direction G was also analyzed. The results revealed that growth rate is the key factor affecting point defects in single crystalline silicon with no dislocations.",
author = "Chen, {X. J.} and S. Nakano and Liu, {L. J.} and Koichi Kakimoto",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.jcrysgro.2009.10.035",
language = "English",
volume = "312",
pages = "192--197",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

AU - Chen, X. J.

AU - Nakano, S.

AU - Liu, L. J.

AU - Kakimoto, Koichi

PY - 2010/1/1

Y1 - 2010/1/1

N2 - A gedanken experiment was carried out to investigate point defects formed in unidirectional solidified single crystalline silicon for solar cells, ignoring dislocations in crystals. A transient global model was used to obtain the solution of a thermal field within the entire furnace. Then, based on the global solution of heat transfer, diffusion and recombination of vacancies and interstitials were calculated by the Finite Volume Method (FVM). It was found that vacancies became dominant as the melt was solidified and solidification time was reduced. The ratio between growth rate Vg and temperature gradient in growth direction G was also analyzed. The results revealed that growth rate is the key factor affecting point defects in single crystalline silicon with no dislocations.

AB - A gedanken experiment was carried out to investigate point defects formed in unidirectional solidified single crystalline silicon for solar cells, ignoring dislocations in crystals. A transient global model was used to obtain the solution of a thermal field within the entire furnace. Then, based on the global solution of heat transfer, diffusion and recombination of vacancies and interstitials were calculated by the Finite Volume Method (FVM). It was found that vacancies became dominant as the melt was solidified and solidification time was reduced. The ratio between growth rate Vg and temperature gradient in growth direction G was also analyzed. The results revealed that growth rate is the key factor affecting point defects in single crystalline silicon with no dislocations.

UR - http://www.scopus.com/inward/record.url?scp=71649110902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71649110902&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.10.035

DO - 10.1016/j.jcrysgro.2009.10.035

M3 - Article

VL - 312

SP - 192

EP - 197

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -