General relationship for cation and anion doping effects on ferroelectric HfO2 formation

L. Xu, S. Shibayama, K. Izukashi, T. Nishimura, T. Yajima, S. Migita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO2 ferroelectricity design. In addition, ferroelectric N-doped HfO2 has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25.2.1-25.2.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - Jan 31 2017
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/TerritoryUnited States
CitySan Francisco
Period12/3/1612/7/16

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'General relationship for cation and anion doping effects on ferroelectric HfO<sub>2</sub> formation'. Together they form a unique fingerprint.

Cite this