General silicon-on-insulator higher-order mode converter based on substrip dielectric waveguides

Basma E. Abu-Elmaaty, Mohammed S. Sayed, Ramesh Pokharel, Hossam M.H. Shalaby

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A general silicon mode-converter waveguide that converts a fundamental mode to any higher-order mode is proposed. Specifically, dielectric substrip waveguides are inserted in the fundamental mode propagation path so that the conversion is done directly in the same propagation waveguide, without coupling the power into another waveguide as it happens in traditional mode converters. The device has a very small footprint compared to traditional converters. A mathematical model is developed to determine the design parameters of the used dielectric material and analyze the whole performance of the proposed device. Both the effective index method (EIM) and the perturbative mode-coupled theory are used in our mathematical analysis to get exact values for both the coupling coefficient and the length of the used dielectric material, so as to ensure a maximum coupled power transfer to the higher-order mode. In addition, full vectorial 3D-FDTD simulations are performed to validate our mathematical model. Our results show good agreement between the approximate EIM method and accurate full vectorial 3D-finite-difference time-domain (FDTD) simulations in characterizing the device parameters and performance. In order to validate the design model, two mode converters are simulated, fabricated, and tested for converting a fundamental TE 0 mode into both first- and second-order (TE 1 and TE 2 ) modes, respectively. Good insertion losses and low crosstalks are obtained. Good agreement between simulated and fabricated results are achieved.

Original languageEnglish
Pages (from-to)1763-1771
Number of pages9
JournalApplied Optics
Volume58
Issue number7
DOIs
Publication statusPublished - Mar 1 2019

Fingerprint

Dielectric waveguides
dielectric waveguides
converters
Waveguides
insulators
Silicon
silicon
Mathematical models
Crosstalk
Insertion losses
waveguides
mathematical models
applications of mathematics
propagation modes
footprints
coupling coefficients
crosstalk
insertion loss
coupled modes
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

General silicon-on-insulator higher-order mode converter based on substrip dielectric waveguides. / Abu-Elmaaty, Basma E.; Sayed, Mohammed S.; Pokharel, Ramesh; Shalaby, Hossam M.H.

In: Applied Optics, Vol. 58, No. 7, 01.03.2019, p. 1763-1771.

Research output: Contribution to journalArticle

Abu-Elmaaty, Basma E. ; Sayed, Mohammed S. ; Pokharel, Ramesh ; Shalaby, Hossam M.H. / General silicon-on-insulator higher-order mode converter based on substrip dielectric waveguides. In: Applied Optics. 2019 ; Vol. 58, No. 7. pp. 1763-1771.
@article{f584a493dd0e4ae3ba15aea6ffc37e8a,
title = "General silicon-on-insulator higher-order mode converter based on substrip dielectric waveguides",
abstract = "A general silicon mode-converter waveguide that converts a fundamental mode to any higher-order mode is proposed. Specifically, dielectric substrip waveguides are inserted in the fundamental mode propagation path so that the conversion is done directly in the same propagation waveguide, without coupling the power into another waveguide as it happens in traditional mode converters. The device has a very small footprint compared to traditional converters. A mathematical model is developed to determine the design parameters of the used dielectric material and analyze the whole performance of the proposed device. Both the effective index method (EIM) and the perturbative mode-coupled theory are used in our mathematical analysis to get exact values for both the coupling coefficient and the length of the used dielectric material, so as to ensure a maximum coupled power transfer to the higher-order mode. In addition, full vectorial 3D-FDTD simulations are performed to validate our mathematical model. Our results show good agreement between the approximate EIM method and accurate full vectorial 3D-finite-difference time-domain (FDTD) simulations in characterizing the device parameters and performance. In order to validate the design model, two mode converters are simulated, fabricated, and tested for converting a fundamental TE 0 mode into both first- and second-order (TE 1 and TE 2 ) modes, respectively. Good insertion losses and low crosstalks are obtained. Good agreement between simulated and fabricated results are achieved.",
author = "Abu-Elmaaty, {Basma E.} and Sayed, {Mohammed S.} and Ramesh Pokharel and Shalaby, {Hossam M.H.}",
year = "2019",
month = "3",
day = "1",
doi = "10.1364/AO.58.001763",
language = "English",
volume = "58",
pages = "1763--1771",
journal = "Applied Optics",
issn = "1559-128X",
publisher = "The Optical Society",
number = "7",

}

TY - JOUR

T1 - General silicon-on-insulator higher-order mode converter based on substrip dielectric waveguides

AU - Abu-Elmaaty, Basma E.

AU - Sayed, Mohammed S.

AU - Pokharel, Ramesh

AU - Shalaby, Hossam M.H.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - A general silicon mode-converter waveguide that converts a fundamental mode to any higher-order mode is proposed. Specifically, dielectric substrip waveguides are inserted in the fundamental mode propagation path so that the conversion is done directly in the same propagation waveguide, without coupling the power into another waveguide as it happens in traditional mode converters. The device has a very small footprint compared to traditional converters. A mathematical model is developed to determine the design parameters of the used dielectric material and analyze the whole performance of the proposed device. Both the effective index method (EIM) and the perturbative mode-coupled theory are used in our mathematical analysis to get exact values for both the coupling coefficient and the length of the used dielectric material, so as to ensure a maximum coupled power transfer to the higher-order mode. In addition, full vectorial 3D-FDTD simulations are performed to validate our mathematical model. Our results show good agreement between the approximate EIM method and accurate full vectorial 3D-finite-difference time-domain (FDTD) simulations in characterizing the device parameters and performance. In order to validate the design model, two mode converters are simulated, fabricated, and tested for converting a fundamental TE 0 mode into both first- and second-order (TE 1 and TE 2 ) modes, respectively. Good insertion losses and low crosstalks are obtained. Good agreement between simulated and fabricated results are achieved.

AB - A general silicon mode-converter waveguide that converts a fundamental mode to any higher-order mode is proposed. Specifically, dielectric substrip waveguides are inserted in the fundamental mode propagation path so that the conversion is done directly in the same propagation waveguide, without coupling the power into another waveguide as it happens in traditional mode converters. The device has a very small footprint compared to traditional converters. A mathematical model is developed to determine the design parameters of the used dielectric material and analyze the whole performance of the proposed device. Both the effective index method (EIM) and the perturbative mode-coupled theory are used in our mathematical analysis to get exact values for both the coupling coefficient and the length of the used dielectric material, so as to ensure a maximum coupled power transfer to the higher-order mode. In addition, full vectorial 3D-FDTD simulations are performed to validate our mathematical model. Our results show good agreement between the approximate EIM method and accurate full vectorial 3D-finite-difference time-domain (FDTD) simulations in characterizing the device parameters and performance. In order to validate the design model, two mode converters are simulated, fabricated, and tested for converting a fundamental TE 0 mode into both first- and second-order (TE 1 and TE 2 ) modes, respectively. Good insertion losses and low crosstalks are obtained. Good agreement between simulated and fabricated results are achieved.

UR - http://www.scopus.com/inward/record.url?scp=85062237144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062237144&partnerID=8YFLogxK

U2 - 10.1364/AO.58.001763

DO - 10.1364/AO.58.001763

M3 - Article

C2 - 30874217

AN - SCOPUS:85062237144

VL - 58

SP - 1763

EP - 1771

JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 7

ER -