Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Akira Nakajima, Pucheng Liu, Masahiko Ogura, Toshiharu Makino, Kuniyuki Kakushima, Shinichi Nishizawa, Hiromichi Ohashi, Satoshi Yamasaki, Hiroshi Iwai

Research output: Contribution to journalArticle

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Abstract

The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80-460 K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm/Vs at 300 K was achieved with a density of 1 × 10 cm-2.

Original languageEnglish
Article number153707
JournalJournal of Applied Physics
Volume115
Issue number15
DOIs
Publication statusPublished - Apr 21 2014
Externally publishedYes

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gases
electron gas
Hall effect
sapphire
electrical properties
room temperature
polarization
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures. / Nakajima, Akira; Liu, Pucheng; Ogura, Masahiko; Makino, Toshiharu; Kakushima, Kuniyuki; Nishizawa, Shinichi; Ohashi, Hiromichi; Yamasaki, Satoshi; Iwai, Hiroshi.

In: Journal of Applied Physics, Vol. 115, No. 15, 153707, 21.04.2014.

Research output: Contribution to journalArticle

Nakajima, A, Liu, P, Ogura, M, Makino, T, Kakushima, K, Nishizawa, S, Ohashi, H, Yamasaki, S & Iwai, H 2014, 'Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures', Journal of Applied Physics, vol. 115, no. 15, 153707. https://doi.org/10.1063/1.4872242
Nakajima, Akira ; Liu, Pucheng ; Ogura, Masahiko ; Makino, Toshiharu ; Kakushima, Kuniyuki ; Nishizawa, Shinichi ; Ohashi, Hiromichi ; Yamasaki, Satoshi ; Iwai, Hiroshi. / Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures. In: Journal of Applied Physics. 2014 ; Vol. 115, No. 15.
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AU - Kakushima, Kuniyuki

AU - Nishizawa, Shinichi

AU - Ohashi, Hiromichi

AU - Yamasaki, Satoshi

AU - Iwai, Hiroshi

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