Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Akira Nakajima; Pucheng Liu; Masahiko Ogura; Toshiharu Makino; Kuniyuki Kakushima; Shinichi Nishizawa; Hiromichi Ohashi; Satoshi Yamasaki; Hiroshi Iwai

doi:10.1063/1.4872242

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Akira Nakajima, Pucheng Liu, Masahiko Ogura, Toshiharu Makino, Kuniyuki Kakushima, Shinichi Nishizawa, Hiromichi Ohashi, Satoshi Yamasaki, Hiroshi Iwai

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33 Citations (Scopus)

Abstract

The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80-460 K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm/Vs at 300 K was achieved with a density of 1 × 10 cm^-2.

Original language	English
Article number	153707
Journal	Journal of Applied Physics
Volume	115
Issue number	15
DOIs	https://doi.org/10.1063/1.4872242
Publication status	Published - Apr 21 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.4872242

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@article{3168755e544141fcb07f39127859e8a9,

title = "Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures",

abstract = "The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80-460 K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm/Vs at 300 K was achieved with a density of 1 × 10 cm-2.",

author = "Akira Nakajima and Pucheng Liu and Masahiko Ogura and Toshiharu Makino and Kuniyuki Kakushima and Shinichi Nishizawa and Hiromichi Ohashi and Satoshi Yamasaki and Hiroshi Iwai",

year = "2014",

month = apr,

day = "21",

doi = "10.1063/1.4872242",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

AU - Nakajima, Akira

AU - Liu, Pucheng

AU - Ogura, Masahiko

AU - Makino, Toshiharu

AU - Kakushima, Kuniyuki

AU - Nishizawa, Shinichi

AU - Ohashi, Hiromichi

AU - Yamasaki, Satoshi

AU - Iwai, Hiroshi

PY - 2014/4/21

Y1 - 2014/4/21

N2 - The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80-460 K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm/Vs at 300 K was achieved with a density of 1 × 10 cm-2.

AB - The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80-460 K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm/Vs at 300 K was achieved with a density of 1 × 10 cm-2.

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DO - 10.1063/1.4872242

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VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 15

M1 - 153707

ER -

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

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