Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Isao Takahashi, Noritaka Usami, Kentaro Kutsukake, Gaute Stokkan, Kohei Morishita, Kazuo Nakajima

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

We investigated the generation mechanism of dislocations by comparing dislocation occurrence in multicrystalline silicon with calculated results of the shear stress on the slip plane by finite element analysis. To mimic the multicrystalline Si and to observe structural modification around grain boundaries a model crystal growth set-up was applied using artificially designed seed. We found that the dislocations occur at grain boundary and propagate as crystal growth proceeds. The generation of dislocations was not spatially uniform but often localized in one of the grains. The calculated stress distribution, which depends on crystallographic orientation, implies that the shear stress on the slip plane around the grain boundary is likely to cause occurrence of dislocations.

Original languageEnglish
Pages (from-to)897-901
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number7
DOIs
Publication statusPublished - Mar 15 2010
Externally publishedYes

Fingerprint

Silicon
Dislocations (crystals)
Solidification
Seed
seeds
Grain boundaries
Crystallization
Crystal growth
Shear stress
silicon
grain boundaries
shear stress
crystal growth
slip
Stress concentration
occurrences
Finite element method
stress distribution
causes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed. / Takahashi, Isao; Usami, Noritaka; Kutsukake, Kentaro; Stokkan, Gaute; Morishita, Kohei; Nakajima, Kazuo.

In: Journal of Crystal Growth, Vol. 312, No. 7, 15.03.2010, p. 897-901.

Research output: Contribution to journalArticle

Takahashi, Isao ; Usami, Noritaka ; Kutsukake, Kentaro ; Stokkan, Gaute ; Morishita, Kohei ; Nakajima, Kazuo. / Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 7. pp. 897-901.
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