Generation of amorphous silicon structures by rapid quenching: A molecular-dynamics study

Manabu Ishimaru, Shinji Munetoh, Teruaki Motooka

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117 Citations (Scopus)


Amorphous silicon ((Formula presented)-Si) networks have been generated from melted Si with various quenching rates by molecular-dynamics (MD) simulations employing the Tersoff potential. The cooling rates were set between (Formula presented) and (Formula presented) the latter is the slowest quenching rate in MD simulations previously performed. Although the atomic configurations formed by the cooling rate of (Formula presented) could reproduce the radial distribution function of (Formula presented)-Si obtained experimentally, they contained numerous structural defects such as threefold- and fivefold-coordinated atoms. As the cooling rate decreased, the average coordination number became (Formula presented) and tetrahedral bonds predominated. The structural and dynamical properties of (Formula presented)-Si generated by a cooling rate with (Formula presented) were in excellent agreement with those of (Formula presented)-Si obtained experimentally.

Original languageEnglish
Pages (from-to)15133-15138
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - Jan 1 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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