Generation of dislocations introduced by bending stress in a Si wafer

Renshi Sawada, T. Karaki, J. Watanabe

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Distribution and morphology for dislocations introduced in (001) Si wafers subjected to bending stress at 800°, 900°, and 1100°C were investigated. For wafers bent around a [110] axis at 900° and 1100°C, straight dislocations appeared along the [110] direction only near the neutral plane, and were absent at the surfaces where bending stress is greatest. However, for wafers bent at 800 °C, such straight dislocations were not formed. Dependence of the dislocation distribution and morphology on heat treatment temperature is explained on the basis of interaction between bending stress and SiO2 precipitates introduced in bulk. Also, it was found that the straight [110] dislocations remained still near the neutral plane, even when additional reverse bending stress was applied around an axis parallel to the dislocations, but were transfered toward the tensile surface by bending around an axis normal to the dislocation direction.

    Original languageEnglish
    Pages (from-to)109-114
    Number of pages6
    JournalApplied Physics A Solids and Surfaces
    Volume31
    Issue number2
    DOIs
    Publication statusPublished - Jun 1 1983

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Engineering(all)
    • Physics and Astronomy (miscellaneous)

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