Gettering of crystalline defects in Si by bending

Renshi Sawada, T. Karaki, J. Watanabe

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Suppression of oxidation-induced stacking faults and microdefects in a Si wafer, subjected to bending during thermal oxidation, was studied. Straight dislocations were introduced only at the neutral plane in Si bulk, during bending in a furnace and retained as sinks through all subsequent high-temperature processings, thereby continuing to suppress the formation of oxidation-induced stacking faults and microdefects. Gettering while applying bending stress to the wafer is described, including the formation mechanism for dislocations at the neutral region.

Original languageEnglish
Pages (from-to)368-369
Number of pages2
JournalApplied Physics Letters
Volume38
Issue number5
DOIs
Publication statusPublished - Dec 1 1981

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crystal defects
oxidation
defects
wafers
sinks
furnaces
retarding

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Gettering of crystalline defects in Si by bending. / Sawada, Renshi; Karaki, T.; Watanabe, J.

In: Applied Physics Letters, Vol. 38, No. 5, 01.12.1981, p. 368-369.

Research output: Contribution to journalArticle

Sawada, R, Karaki, T & Watanabe, J 1981, 'Gettering of crystalline defects in Si by bending', Applied Physics Letters, vol. 38, no. 5, pp. 368-369. https://doi.org/10.1063/1.92340
Sawada, Renshi ; Karaki, T. ; Watanabe, J. / Gettering of crystalline defects in Si by bending. In: Applied Physics Letters. 1981 ; Vol. 38, No. 5. pp. 368-369.
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