Gettering of Fe by aluminum in p-type Cz silicon

S. H. Ahn, S. Zhao, A. L. Smith, L. L. Chalfoun, M. Platero, H. Nakashima, L. C. Kimerling

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

In this study, we investigate the gettering process of Fe in p-type Cz silicon after iron has been introduced at the solubility limit at 1000°C. Deep Level Transient Spectroscopy (DLTS) was used to measure [FeB], a fingerprint of [Fei], at the center of samples. The minority carrier diffusion length and lifetime were calculated from Electron Beam Induced Current (EBIC) measurements. The fact that [FeB] is proportional to the negative second power of the minority carrier diffusion length at the high [FeB] regime confirms that FeB donors are the dominant recombination centers limiting solar cell performance with high Fe contamination. By quenching after heat treatment, we can maintain and measure the kinetics and thermodynamics of gettering exclusively. The getter/silicon interface was studied by comparison of the gettering rates of molten Al at 620°C, 700°C, and 800°C, and iron silicide at 700°C. We model Fe gettering with respect to temperature, time, solubility and precipitate nuclei density. In the early stage of Fe gettering, the process is dominated by precipitate formation around oxygen precipitate nuclei. The precipitate density is estimated to be on the order of 5×108cm-3. In later stages, Fe outdiffusion contributes to the [Fei] reduction. The early stage precipitation limits [Fei] reduction after short time to the solubility at the gettering temperature.

Original languageEnglish
Pages (from-to)169-174
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume442
Publication statusPublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Fingerprint

Silicon
Aluminum
silicon
Precipitates
solubility
aluminum
Solubility
iron
Iron
recombination
Deep level transient spectroscopy
Induced currents
Electric current measurement
thermodynamics
temperature
spectroscopy
Molten materials
Electron beams
Quenching
electron

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ahn, S. H., Zhao, S., Smith, A. L., Chalfoun, L. L., Platero, M., Nakashima, H., & Kimerling, L. C. (1997). Gettering of Fe by aluminum in p-type Cz silicon. Materials Research Society Symposium - Proceedings, 442, 169-174.

Gettering of Fe by aluminum in p-type Cz silicon. / Ahn, S. H.; Zhao, S.; Smith, A. L.; Chalfoun, L. L.; Platero, M.; Nakashima, H.; Kimerling, L. C.

In: Materials Research Society Symposium - Proceedings, Vol. 442, 01.01.1997, p. 169-174.

Research output: Contribution to journalConference article

Ahn, SH, Zhao, S, Smith, AL, Chalfoun, LL, Platero, M, Nakashima, H & Kimerling, LC 1997, 'Gettering of Fe by aluminum in p-type Cz silicon', Materials Research Society Symposium - Proceedings, vol. 442, pp. 169-174.
Ahn SH, Zhao S, Smith AL, Chalfoun LL, Platero M, Nakashima H et al. Gettering of Fe by aluminum in p-type Cz silicon. Materials Research Society Symposium - Proceedings. 1997 Jan 1;442:169-174.
Ahn, S. H. ; Zhao, S. ; Smith, A. L. ; Chalfoun, L. L. ; Platero, M. ; Nakashima, H. ; Kimerling, L. C. / Gettering of Fe by aluminum in p-type Cz silicon. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 442. pp. 169-174.
@article{f24be43904b242a585c8ffed20569b7d,
title = "Gettering of Fe by aluminum in p-type Cz silicon",
abstract = "In this study, we investigate the gettering process of Fe in p-type Cz silicon after iron has been introduced at the solubility limit at 1000°C. Deep Level Transient Spectroscopy (DLTS) was used to measure [FeB], a fingerprint of [Fei], at the center of samples. The minority carrier diffusion length and lifetime were calculated from Electron Beam Induced Current (EBIC) measurements. The fact that [FeB] is proportional to the negative second power of the minority carrier diffusion length at the high [FeB] regime confirms that FeB donors are the dominant recombination centers limiting solar cell performance with high Fe contamination. By quenching after heat treatment, we can maintain and measure the kinetics and thermodynamics of gettering exclusively. The getter/silicon interface was studied by comparison of the gettering rates of molten Al at 620°C, 700°C, and 800°C, and iron silicide at 700°C. We model Fe gettering with respect to temperature, time, solubility and precipitate nuclei density. In the early stage of Fe gettering, the process is dominated by precipitate formation around oxygen precipitate nuclei. The precipitate density is estimated to be on the order of 5×108cm-3. In later stages, Fe outdiffusion contributes to the [Fei] reduction. The early stage precipitation limits [Fei] reduction after short time to the solubility at the gettering temperature.",
author = "Ahn, {S. H.} and S. Zhao and Smith, {A. L.} and Chalfoun, {L. L.} and M. Platero and H. Nakashima and Kimerling, {L. C.}",
year = "1997",
month = "1",
day = "1",
language = "English",
volume = "442",
pages = "169--174",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Gettering of Fe by aluminum in p-type Cz silicon

AU - Ahn, S. H.

AU - Zhao, S.

AU - Smith, A. L.

AU - Chalfoun, L. L.

AU - Platero, M.

AU - Nakashima, H.

AU - Kimerling, L. C.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - In this study, we investigate the gettering process of Fe in p-type Cz silicon after iron has been introduced at the solubility limit at 1000°C. Deep Level Transient Spectroscopy (DLTS) was used to measure [FeB], a fingerprint of [Fei], at the center of samples. The minority carrier diffusion length and lifetime were calculated from Electron Beam Induced Current (EBIC) measurements. The fact that [FeB] is proportional to the negative second power of the minority carrier diffusion length at the high [FeB] regime confirms that FeB donors are the dominant recombination centers limiting solar cell performance with high Fe contamination. By quenching after heat treatment, we can maintain and measure the kinetics and thermodynamics of gettering exclusively. The getter/silicon interface was studied by comparison of the gettering rates of molten Al at 620°C, 700°C, and 800°C, and iron silicide at 700°C. We model Fe gettering with respect to temperature, time, solubility and precipitate nuclei density. In the early stage of Fe gettering, the process is dominated by precipitate formation around oxygen precipitate nuclei. The precipitate density is estimated to be on the order of 5×108cm-3. In later stages, Fe outdiffusion contributes to the [Fei] reduction. The early stage precipitation limits [Fei] reduction after short time to the solubility at the gettering temperature.

AB - In this study, we investigate the gettering process of Fe in p-type Cz silicon after iron has been introduced at the solubility limit at 1000°C. Deep Level Transient Spectroscopy (DLTS) was used to measure [FeB], a fingerprint of [Fei], at the center of samples. The minority carrier diffusion length and lifetime were calculated from Electron Beam Induced Current (EBIC) measurements. The fact that [FeB] is proportional to the negative second power of the minority carrier diffusion length at the high [FeB] regime confirms that FeB donors are the dominant recombination centers limiting solar cell performance with high Fe contamination. By quenching after heat treatment, we can maintain and measure the kinetics and thermodynamics of gettering exclusively. The getter/silicon interface was studied by comparison of the gettering rates of molten Al at 620°C, 700°C, and 800°C, and iron silicide at 700°C. We model Fe gettering with respect to temperature, time, solubility and precipitate nuclei density. In the early stage of Fe gettering, the process is dominated by precipitate formation around oxygen precipitate nuclei. The precipitate density is estimated to be on the order of 5×108cm-3. In later stages, Fe outdiffusion contributes to the [Fei] reduction. The early stage precipitation limits [Fei] reduction after short time to the solubility at the gettering temperature.

UR - http://www.scopus.com/inward/record.url?scp=0030681516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030681516&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030681516

VL - 442

SP - 169

EP - 174

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -