Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy

T. Tanaka, M. Tanaka, M. Itakura, T. Sadoh, M. Miyao

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Giant growth (~ 400 μm length) of single crystalline Ge on insulator (GOI) with (100), (110), and (111) orientations is demonstrated by lateral liquid-phase epitaxy (L-LPE) using Si(100), (110), and (111) substrates, respectively, as the seeds. The micro-probe Raman measurements and transmission electron microscopy observations showed that the growth regions were of very high crystal quality and were defect free. In addition, lateral diffusion of Si atoms was observed only in the regions near the seeding edges (~ 100 μm). Based on these findings, the trigger for the giant growth of the high-quality GOI was discussed considering the solidification temperature gradient due to Si-Ge mixing and the thermal gradient due to the latent heat at the growth front.

Original languageEnglish
Pages (from-to)S170-S173
JournalThin Solid Films
Volume518
Issue number6 SUPPL. 1
DOIs
Publication statusPublished - Jan 1 2010

Fingerprint

Liquid phase epitaxy
liquid phase epitaxy
inoculation
insulators
Crystalline materials
Thermal gradients
Latent heat
latent heat
solidification
Solidification
Seed
seeds
temperature gradients
actuators
Transmission electron microscopy
Atoms
gradients
Defects
transmission electron microscopy
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy. / Tanaka, T.; Tanaka, M.; Itakura, M.; Sadoh, T.; Miyao, M.

In: Thin Solid Films, Vol. 518, No. 6 SUPPL. 1, 01.01.2010, p. S170-S173.

Research output: Contribution to journalArticle

Tanaka, T. ; Tanaka, M. ; Itakura, M. ; Sadoh, T. ; Miyao, M. / Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy. In: Thin Solid Films. 2010 ; Vol. 518, No. 6 SUPPL. 1. pp. S170-S173.
@article{a4da43ead1d143cd855426a8e890972d,
title = "Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy",
abstract = "Giant growth (~ 400 μm length) of single crystalline Ge on insulator (GOI) with (100), (110), and (111) orientations is demonstrated by lateral liquid-phase epitaxy (L-LPE) using Si(100), (110), and (111) substrates, respectively, as the seeds. The micro-probe Raman measurements and transmission electron microscopy observations showed that the growth regions were of very high crystal quality and were defect free. In addition, lateral diffusion of Si atoms was observed only in the regions near the seeding edges (~ 100 μm). Based on these findings, the trigger for the giant growth of the high-quality GOI was discussed considering the solidification temperature gradient due to Si-Ge mixing and the thermal gradient due to the latent heat at the growth front.",
author = "T. Tanaka and M. Tanaka and M. Itakura and T. Sadoh and M. Miyao",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2009.10.081",
language = "English",
volume = "518",
pages = "S170--S173",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "6 SUPPL. 1",

}

TY - JOUR

T1 - Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy

AU - Tanaka, T.

AU - Tanaka, M.

AU - Itakura, M.

AU - Sadoh, T.

AU - Miyao, M.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Giant growth (~ 400 μm length) of single crystalline Ge on insulator (GOI) with (100), (110), and (111) orientations is demonstrated by lateral liquid-phase epitaxy (L-LPE) using Si(100), (110), and (111) substrates, respectively, as the seeds. The micro-probe Raman measurements and transmission electron microscopy observations showed that the growth regions were of very high crystal quality and were defect free. In addition, lateral diffusion of Si atoms was observed only in the regions near the seeding edges (~ 100 μm). Based on these findings, the trigger for the giant growth of the high-quality GOI was discussed considering the solidification temperature gradient due to Si-Ge mixing and the thermal gradient due to the latent heat at the growth front.

AB - Giant growth (~ 400 μm length) of single crystalline Ge on insulator (GOI) with (100), (110), and (111) orientations is demonstrated by lateral liquid-phase epitaxy (L-LPE) using Si(100), (110), and (111) substrates, respectively, as the seeds. The micro-probe Raman measurements and transmission electron microscopy observations showed that the growth regions were of very high crystal quality and were defect free. In addition, lateral diffusion of Si atoms was observed only in the regions near the seeding edges (~ 100 μm). Based on these findings, the trigger for the giant growth of the high-quality GOI was discussed considering the solidification temperature gradient due to Si-Ge mixing and the thermal gradient due to the latent heat at the growth front.

UR - http://www.scopus.com/inward/record.url?scp=73649125501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73649125501&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.10.081

DO - 10.1016/j.tsf.2009.10.081

M3 - Article

AN - SCOPUS:73649125501

VL - 518

SP - S170-S173

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 6 SUPPL. 1

ER -