Formation of SiGe crystals with large-grain on insulating-substrates is desired to achieve high-speed thin-film-transistors (TFT). We examine rapid-thermal annealing (950-1100°C) of a-Si0.15Ge0.85-stripe (2-15-μm-stripe-width) on insulator structures in solid-liquid-coexisting temperature-region. Formation of Si-rich micro-crystal-nuclei during annealing is clearly evidenced, where Si concentration and areal-density of micro-crystals are uniquely determined by annealing-temperature. Such self-organized-seeding enables lateral rapid-melting-growth from micro-crystals during cooling. The micro-crystals density per-unit-length is proportional to stripe-width, which results in enlargement of lateral-growth-length by narrowing stripe-width. Consequently, giant-lateral-growth of SiGe grains (∼300-μm-length, 0-40%-Si-concentration) are achieved for narrow-stripe-width of 2 μm at 1050°C. This technique facilitates advanced TFT for high-performance system-in-displays.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering