Global analysis of GaN growth using a solution technique

D. Kashiwagi, R. Gejo, Y. Kangawa, L. Liu, F. Kawamura, Y. Mori, T. Sasaki, K. Kakimoto

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The solution growth technique is one of the key methods for fabricating gallium nitride (GaN) wafers with small dislocation density. Since the growth rate of GaN using the solution technique is small, the key issue of the technique is to enhance the growth rate of the crystal. We studied how nitrogen is transferred from the surface of the flux to the interface between the top of the flux and the crystal in a muffle furnace using a global model that includes radiative, convective and conductive heat and mass transfer, including nitrogen transfer. The average growth rate of GaN increased when the temperature difference between the furnace wall and a crucible wall became large. This phenomenon is based on mixing of the flux due to natural convection.

Original languageEnglish
Pages (from-to)1790-1793
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
Publication statusPublished - Apr 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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