Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

B. Gao, K. Kakimoto

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon transport in the whole furnace was implemented. Both gas-phase transportation and liquid-phase transportation of oxygen and carbon were considered. With five chemical reactions considered, SiO and CO concentrations in gas and C and O atom concentrations in silicon melt were solved simultaneously. The simulation results show good agreement with experimental data.

Original languageEnglish
Pages (from-to)2972-2976
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number20
DOIs
Publication statusPublished - Oct 1 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth'. Together they form a unique fingerprint.

Cite this