Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

B. Gao; K. Kakimoto

doi:10.1016/j.jcrysgro.2010.07.026

Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

B. Gao, K. Kakimoto

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon transport in the whole furnace was implemented. Both gas-phase transportation and liquid-phase transportation of oxygen and carbon were considered. With five chemical reactions considered, SiO and CO concentrations in gas and C and O atom concentrations in silicon melt were solved simultaneously. The simulation results show good agreement with experimental data.

Original language	English
Pages (from-to)	2972-2976
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	20
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.07.026
Publication status	Published - Oct 1 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.07.026

Cite this

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abstract = "For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon transport in the whole furnace was implemented. Both gas-phase transportation and liquid-phase transportation of oxygen and carbon were considered. With five chemical reactions considered, SiO and CO concentrations in gas and C and O atom concentrations in silicon melt were solved simultaneously. The simulation results show good agreement with experimental data.",

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AU - Kakimoto, K.

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N2 - For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon transport in the whole furnace was implemented. Both gas-phase transportation and liquid-phase transportation of oxygen and carbon were considered. With five chemical reactions considered, SiO and CO concentrations in gas and C and O atom concentrations in silicon melt were solved simultaneously. The simulation results show good agreement with experimental data.

AB - For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon transport in the whole furnace was implemented. Both gas-phase transportation and liquid-phase transportation of oxygen and carbon were considered. With five chemical reactions considered, SiO and CO concentrations in gas and C and O atom concentrations in silicon melt were solved simultaneously. The simulation results show good agreement with experimental data.

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Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

Abstract

All Science Journal Classification (ASJC) codes

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